Behavior of Cu-In-Te electrodeposition from acid solution

Takahiro Ishizaki, Nagahiro Saito, Daisuke Yata, Akio Fuwa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    2 Citations (Scopus)

    Abstract

    Ternary compound-semiconductor, CuInTe2, film was deposited cathodically under potentiostatic conditions on titanium substrate from aqueous solution containing CuCl2, InCl3, TeO2 and HCl in this study. The deposition parameters such as electrolytic solution composition, potential and temperature were optimized for electrodeposition of CuInTe2. Structural characterization of the deposited film was also carried out using XRD and SEM. Electrodeposited films were prepared and analyzed for their chemical composition using ICP. The ICP analyses showed that the stoichiometry of the films could be controlled by (1) the deposition potential and/or by (2) the electrolytic bath composition.

    Original languageEnglish
    Title of host publicationProceedings of the Second International Conference on Processing Materials for Properties
    EditorsB. Mishra, C, Yamauchi, B. Mishra, C. Yamauchi
    Pages281-284
    Number of pages4
    Publication statusPublished - 2000
    EventProceedings of the Second International Conference on Processing Materials for Properties - San Francisco, CA
    Duration: 2000 Nov 52000 Nov 8

    Other

    OtherProceedings of the Second International Conference on Processing Materials for Properties
    CitySan Francisco, CA
    Period00/11/500/11/8

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    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

    Ishizaki, T., Saito, N., Yata, D., & Fuwa, A. (2000). Behavior of Cu-In-Te electrodeposition from acid solution. In B. Mishra, C. Yamauchi, B. Mishra, & C. Yamauchi (Eds.), Proceedings of the Second International Conference on Processing Materials for Properties (pp. 281-284)