Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation

Iwao Ohdomari, Toyohiro Chikyow, Hiroshi Kawarada, Kazuo Konuma, Masakazu Kakumu, Kazuhiko Hashimoto, Itsuro Kimura, Kenji Yoneda

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    Abstract

    The behavior of ion implanted As atoms during MoSi2 formation has been investigated by I-V measurement and neutron activation analysis. I-V characteristics of the MoSi2/Si interface was rectifying indicating that the impurity concentration in Si is very low. Arsenic atoms implanted in the Si substrate were found to redistribute toward the MoSi2/Si interface, but not into the underlying Si. The reason for no enhanced diffusion of As during MoSi2 formation has been discussed in terms of point defects which are not likely to be generated for the silicides in which Si is the dominant diffusing species.

    Original languageEnglish
    Pages (from-to)3073-3076
    Number of pages4
    JournalJournal of Applied Physics
    Volume59
    Issue number9
    DOIs
    Publication statusPublished - 1986

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

    Cite this

    Ohdomari, I., Chikyow, T., Kawarada, H., Konuma, K., Kakumu, M., Hashimoto, K., Kimura, I., & Yoneda, K. (1986). Behavior of ion-implanted As atoms in Si during molybdenum disilicide formation. Journal of Applied Physics, 59(9), 3073-3076. https://doi.org/10.1063/1.336930