Beryllium-doped single-crystal diamond grown by microwave plasma CVD

K. Ueda; M. Kasu

doi:10.1016/j.diamond.2008.10.009

Beryllium-doped single-crystal diamond grown by microwave plasma CVD

K. Ueda^*, M. Kasu

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 10¹⁶ to ∼ 10¹⁸ cm^{- 3} by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.

Original language	English
Pages (from-to)	121-123
Number of pages	3
Journal	Diamond and Related Materials
Volume	18
Issue number	2-3
DOIs	https://doi.org/10.1016/j.diamond.2008.10.009
Publication status	Published - 2009 Feb
Externally published	Yes

Keywords

Beryllium
Cathodoluminescence
CVD
Diamond
Doping

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/j.diamond.2008.10.009

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@article{f702145f73d145d6bd8e787029fabda8,

title = "Beryllium-doped single-crystal diamond grown by microwave plasma CVD",

abstract = "We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 1016 to ∼ 1018 cm- 3 by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.",

keywords = "Beryllium, Cathodoluminescence, CVD, Diamond, Doping",

author = "K. Ueda and M. Kasu",

note = "Funding Information: The authors thank Drs. H. Kageshima and Y. Yamauchi for fruitful discussions, and Drs. K. Torimitsu and J. Yumoto for their support and encouragement. They thank Dr. A. Takano (NTT Advance Technology) for SIMS measurements. The authors owe special thanks to Prof. Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout our work. This work was partly supported by the SCOPE project, “Diamond transistors for RF power amplifiers in microwave wireless communications”, from the Ministry of Internal Affairs and Communications, Japan. ",

year = "2009",

month = feb,

doi = "10.1016/j.diamond.2008.10.009",

language = "English",

volume = "18",

pages = "121--123",

journal = "Diamond and Related Materials",

issn = "0925-9635",

publisher = "Elsevier BV",

number = "2-3",

}

TY - JOUR

T1 - Beryllium-doped single-crystal diamond grown by microwave plasma CVD

AU - Ueda, K.

AU - Kasu, M.

N1 - Funding Information: The authors thank Drs. H. Kageshima and Y. Yamauchi for fruitful discussions, and Drs. K. Torimitsu and J. Yumoto for their support and encouragement. They thank Dr. A. Takano (NTT Advance Technology) for SIMS measurements. The authors owe special thanks to Prof. Erhard Kohn (University of Ulm, Germany) for his continuous suggestions throughout our work. This work was partly supported by the SCOPE project, “Diamond transistors for RF power amplifiers in microwave wireless communications”, from the Ministry of Internal Affairs and Communications, Japan.

PY - 2009/2

Y1 - 2009/2

N2 - We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 1016 to ∼ 1018 cm- 3 by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.

AB - We performed beryllium (Be) doping to diamond by inserting a solid Be-rod into the plasma ball during microwave plasma CVD growth. The Be concentration can be controlled in the range from ∼ 1016 to ∼ 1018 cm- 3 by changing the Be-rod insertion depth in the plasma ball and the microwave power. In cathodoluminescence (CL) spectra of Be-doped CVD films, we observed a peak at 4.760 eV and its phonon replica as well as free-exciton (FE)-related emissions. Peak energies of these emissions are close to those of Be-related emissions from Be-implanted diamond films.

KW - Beryllium

KW - Cathodoluminescence

KW - CVD

KW - Diamond

KW - Doping

UR - http://www.scopus.com/inward/record.url?scp=59649114915&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=59649114915&partnerID=8YFLogxK

U2 - 10.1016/j.diamond.2008.10.009

DO - 10.1016/j.diamond.2008.10.009

M3 - Article

AN - SCOPUS:59649114915

SN - 0925-9635

VL - 18

SP - 121

EP - 123

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 2-3

ER -

Beryllium-doped single-crystal diamond grown by microwave plasma CVD

Abstract

Keywords

ASJC Scopus subject areas

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