Beryllium implantation doping of silicon carbide

T. Henkel, Y. Tanaka, Naoto Kobayashi, S. Nishizawa, S. Hishita

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

Structural properties of beryllium implanted silicon carbide have been investigated by secondary ion mass spectrometry, Rutherford backscattering/channeling, and Raman spectroscopy. Strong redistribution of beryllium has been found after a post-implantation anneal step at temperatures between 1300 °C and 1700 °C. The use of a pre-anneal process at 1000 °C before the high-temperature treatment as well as graphite as a surface encapsulant do not efficiently suppress redistribution of Be in the SiC lattice. The crystalline state of the implanted and annealed material is well recovered after annealing at temperatures above 1400 °C.

Original languageEnglish
Title of host publicationMaterials Science Forum
PublisherTrans Tech Publ Ltd
Volume338
Publication statusPublished - 2000
Externally publishedYes
EventICSCRM '99: The International Conference on Silicon Carbide and Related Materials - Research Triangle Park, NC, USA
Duration: 1999 Oct 101999 Oct 15

Other

OtherICSCRM '99: The International Conference on Silicon Carbide and Related Materials
CityResearch Triangle Park, NC, USA
Period99/10/1099/10/15

ASJC Scopus subject areas

  • Materials Science(all)

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  • Cite this

    Henkel, T., Tanaka, Y., Kobayashi, N., Nishizawa, S., & Hishita, S. (2000). Beryllium implantation doping of silicon carbide. In Materials Science Forum (Vol. 338). Trans Tech Publ Ltd.