Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen*, C. C. Ling, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)


Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

Original languageEnglish
Pages (from-to)3117-3119
Number of pages3
JournalJournal of Applied Physics
Issue number5
Publication statusPublished - 2003 Mar 1
Externally publishedYes

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)


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