Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

Original languageEnglish
Pages (from-to)3117-3119
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

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beryllium
silicon carbides
implantation
defects
ionization
annealing
spectroscopy
temperature

ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Beryllium implantation induced deep level defects in p-type 6h-silicon carbide. / Chen, X. D.; Ling, C. C.; Fung, S.; Beling, C. D.; Gong, M.; Henkel, T.; Tanoue, H.; Kobayashi, Naoto.

In: Journal of Applied Physics, Vol. 93, No. 5, 01.03.2003, p. 3117-3119.

Research output: Contribution to journalArticle

Chen, XD, Ling, CC, Fung, S, Beling, CD, Gong, M, Henkel, T, Tanoue, H & Kobayashi, N 2003, 'Beryllium implantation induced deep level defects in p-type 6h-silicon carbide', Journal of Applied Physics, vol. 93, no. 5, pp. 3117-3119. https://doi.org/10.1063/1.1542687
Chen XD, Ling CC, Fung S, Beling CD, Gong M, Henkel T et al. Beryllium implantation induced deep level defects in p-type 6h-silicon carbide. Journal of Applied Physics. 2003 Mar 1;93(5):3117-3119. https://doi.org/10.1063/1.1542687
Chen, X. D. ; Ling, C. C. ; Fung, S. ; Beling, C. D. ; Gong, M. ; Henkel, T. ; Tanoue, H. ; Kobayashi, Naoto. / Beryllium implantation induced deep level defects in p-type 6h-silicon carbide. In: Journal of Applied Physics. 2003 ; Vol. 93, No. 5. pp. 3117-3119.
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