Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen, C. C. Ling, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

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Abstract

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

Original languageEnglish
Pages (from-to)3117-3119
Number of pages3
JournalJournal of Applied Physics
Volume93
Issue number5
DOIs
Publication statusPublished - 2003 Mar 1
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy(all)
  • Physics and Astronomy (miscellaneous)

Cite this

Chen, X. D., Ling, C. C., Fung, S., Beling, C. D., Gong, M., Henkel, T., Tanoue, H., & Kobayashi, N. (2003). Beryllium implantation induced deep level defects in p-type 6h-silicon carbide. Journal of Applied Physics, 93(5), 3117-3119. https://doi.org/10.1063/1.1542687