Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen; C. C. Ling; S. Fung; C. D. Beling; M. Gong; T. Henkel; H. Tanoue; Naoto Kobayashi

doi:10.1063/1.1542687

Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

X. D. Chen^*, C. C. Ling, S. Fung, C. D. Beling, M. Gong, T. Henkel, H. Tanoue, Naoto Kobayashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at E_v+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

Original language	English
Pages (from-to)	3117-3119
Number of pages	3
Journal	Journal of Applied Physics
Volume	93
Issue number	5
DOIs	https://doi.org/10.1063/1.1542687
Publication status	Published - 2003 Mar 1
Externally published	Yes

ASJC Scopus subject areas

Physics and Astronomy(all)
Physics and Astronomy (miscellaneous)

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abstract = "Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.",

author = "Chen, {X. D.} and Ling, {C. C.} and S. Fung and Beling, {C. D.} and M. Gong and T. Henkel and H. Tanoue and Naoto Kobayashi",

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AU - Chen, X. D.

AU - Ling, C. C.

AU - Fung, S.

AU - Beling, C. D.

AU - Gong, M.

AU - Henkel, T.

AU - Tanoue, H.

AU - Kobayashi, Naoto

PY - 2003/3/1

Y1 - 2003/3/1

N2 - Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

AB - Beryllium implantation into p-type 6H-SiC and subsequent thermal annealing were performed. Deep level transient spectroscopy was used to investigate the deep level defects induced by this beryllium-implantation process. Four deep levels were detected in the temperature range 100-500 K. The level BEP1 at Ev+0.41 eV was found to be consistent with the ionization level of the Be acceptor observed in Hall measurements.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

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ER -

Beryllium implantation induced deep level defects in p-type 6h-silicon carbide

Abstract

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