BGaN micro-islands as novel buffers for GaN hetero-epitaxy

Tetsuya Akasaka, Toshiki Makimoto

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3 Citations (Scopus)

Abstract

BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.

Original languageEnglish
Pages (from-to)L1506-L1508
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number50-52
DOIs
Publication statusPublished - 2005 Dec 16

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Keywords

  • AIGaN/GaN heterostructure
  • BGaN
  • Boron
  • Dislocation
  • Epitaxy
  • GaN
  • Memory effect
  • Sapphire
  • Semi-insulating
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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