BGaN micro-islands as novel buffers for GaN hetero-epitaxy

Tetsuya Akasaka, Toshiki Makimoto

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.

Original languageEnglish
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume44
Issue number50-52
DOIs
Publication statusPublished - 2005 Dec 16
Externally publishedYes

Fingerprint

Two dimensional electron gas
Epitaxial growth
epitaxy
Heterojunctions
buffers
Carrier concentration
Hall mobility
Film growth
Buffer layers
Sapphire
electron gas
sapphire
conduction
Electrons
Substrates
electrons
Temperature
temperature

Keywords

  • AIGaN/GaN heterostructure
  • BGaN
  • Boron
  • Dislocation
  • Epitaxy
  • GaN
  • Memory effect
  • Sapphire
  • Semi-insulating
  • Two-dimensional electron gas

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

BGaN micro-islands as novel buffers for GaN hetero-epitaxy. / Akasaka, Tetsuya; Makimoto, Toshiki.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 44, No. 50-52, 16.12.2005.

Research output: Contribution to journalArticle

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abstract = "BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.",
keywords = "AIGaN/GaN heterostructure, BGaN, Boron, Dislocation, Epitaxy, GaN, Memory effect, Sapphire, Semi-insulating, Two-dimensional electron gas",
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AU - Makimoto, Toshiki

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N2 - BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.

AB - BxGa1-xN (x ∼ 0.02) micro-islands provide novel buffers for growing GaN films and AlGaN/GaN heterostructures on sapphire substrates. These films and heterostructures show low threading dislocation density (TDD), low residual carrier concentration, and high two-dimensional electron gas (2DEG) mobility: Non-doped GaN films had the TDD of 2 × 108 cm-2 and the residual electron concentration of 9.4 × 109 cm-3 at 433 K. AlGaN/GaN heterostructures exhibited 2DEG Hall mobility of 1720 and 13100 cm2 V-1 s-1 at 300 and 77 K, respectively. An almost constant sheet electron density (2.9-4.2 × 1012 cm-2) was obtained in the wide temperature range from 500 to 77 K, indicating the absence of parallel conduction in the GaN buffer layers.

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