Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

Hiroshi Uchida, Ken Nishida, Minoru Osada, [No Value] Funakubo, Seiichiro Koda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
Pages138-141
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07/5/2707/5/31

Fingerprint

Ferroelectric thin films
Rare earths
Ions
Polarization
Ferroelectric materials
Rare earth elements
Ferroelectric films
Thin films
Defects
Crystals
Remanence
Poisons
Curie temperature
Crystal lattices
Perovskite
Superconducting transition temperature
Sol-gels
Anisotropy
Phase transitions

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

Cite this

Uchida, H., Nishida, K., Osada, M., Funakubo, N. V., & Koda, S. (2007). Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. In IEEE International Symposium on Applications of Ferroelectrics (pp. 138-141). [4393194] https://doi.org/10.1109/ISAF.2007.4393194

Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. / Uchida, Hiroshi; Nishida, Ken; Osada, Minoru; Funakubo, [No Value]; Koda, Seiichiro.

IEEE International Symposium on Applications of Ferroelectrics. 2007. p. 138-141 4393194.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Uchida, H, Nishida, K, Osada, M, Funakubo, NV & Koda, S 2007, Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. in IEEE International Symposium on Applications of Ferroelectrics., 4393194, pp. 138-141, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 07/5/27. https://doi.org/10.1109/ISAF.2007.4393194
Uchida H, Nishida K, Osada M, Funakubo NV, Koda S. Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. In IEEE International Symposium on Applications of Ferroelectrics. 2007. p. 138-141. 4393194 https://doi.org/10.1109/ISAF.2007.4393194
Uchida, Hiroshi ; Nishida, Ken ; Osada, Minoru ; Funakubo, [No Value] ; Koda, Seiichiro. / Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification. IEEE International Symposium on Applications of Ferroelectrics. 2007. pp. 138-141
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