Bi-based ferroelectric thin films with enhanced polarization by rare-earth modification

Hiroshi Uchida, Ken Nishida, Minoru Osada, [No Value] Funakubo, Seiichiro Koda

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Thin films of Bi-based perovskite ferroelectrics BiFeO 3 is recently recognized as strong candidates for alternatives to toxic Pb-based ferroelectrics such as conventional Pb(Zr,Ti)O 3. Authors fabricated BiFeO 3 thin films with excellent performance of ferroelectric polarization by ion modification based on sol-gel technique. Some rare-earth ions, such as La 3+ or Nd 3+, could be substituted for Bi 3+ ion in BFO crystal in order to reduce ionic defects in crystal lattices. Electrical resistivity of BiFeO 3 films were improved by ion modification of rare-earth elements, as well as other Bi-based ferroelectric films like Bi 4Ti 3O 12. Although crystal anisotropy and phase-transition temperature (Curie temperature) of these materials are generally reduced by the ion modification, it yield fully-saturated polarization (P) - electrical field (E) property to produce enhanced remanent polarization of approximately 50 μC/cm 2 comparable or superior to conventional Pb(Zr,Ti)O 3 films. We concluded that the ion modification using rare-earth elements could suppress the ionic defects that caused electrical conduction in BiFeO 3 films.

Original languageEnglish
Title of host publicationIEEE International Symposium on Applications of Ferroelectrics
Pages138-141
Number of pages4
DOIs
Publication statusPublished - 2007
Externally publishedYes
Event2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan
Duration: 2007 May 272007 May 31

Other

Other2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
CountryJapan
CityNara-city
Period07/5/2707/5/31

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)

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