BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S.

Yuichi Matsushima, Yukio Noda, Yukitoshi Kushiro

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.

Original languageEnglish
Pages (from-to)1257-1263
Number of pages7
JournalIEEE Journal of Quantum Electronics
VolumeQE-21
Issue number8
Publication statusPublished - 1985 Aug
Externally publishedYes

Fingerprint

Avalanche photodiodes
Vapor phase epitaxy
photodiodes
Heterojunctions
avalanches
Photodiodes
Diodes
ring structures
Electric fields
Fabrication
Temperature
temperature
diodes
prototypes
fabrication
electric fields
rings

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S. / Matsushima, Yuichi; Noda, Yukio; Kushiro, Yukitoshi.

In: IEEE Journal of Quantum Electronics, Vol. QE-21, No. 8, 08.1985, p. 1257-1263.

Research output: Contribution to journalArticle

Matsushima, Yuichi ; Noda, Yukio ; Kushiro, Yukitoshi. / BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S. In: IEEE Journal of Quantum Electronics. 1985 ; Vol. QE-21, No. 8. pp. 1257-1263.
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