BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S.

Yuichi Matsushima, Yukio Noda, Yukitoshi Kushiro

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10 Citations (Scopus)

Abstract

Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.

Original languageEnglish
Pages (from-to)1257-1263
Number of pages7
JournalIEEE Journal of Quantum Electronics
VolumeQE-21
Issue number8
Publication statusPublished - 1985 Aug
Externally publishedYes

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ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

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