Abstract
Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.
| Original language | English |
|---|---|
| Pages (from-to) | 1257-1263 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | QE-21 |
| Issue number | 8 |
| Publication status | Published - 1985 Aug |
| Externally published | Yes |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Fingerprint Dive into the research topics of 'BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S.'. Together they form a unique fingerprint.
Cite this
Matsushima, Y., Noda, Y., & Kushiro, Y. (1985). BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S. IEEE Journal of Quantum Electronics, QE-21(8), 1257-1263.