Abstract
Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.
| Original language | English |
|---|---|
| Pages (from-to) | 1257-1263 |
| Number of pages | 7 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | QE-21 |
| Issue number | 8 |
| Publication status | Published - 1985 Aug |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Physics and Astronomy (miscellaneous)
Cite this
BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S. / Matsushima, Yuichi; Noda, Yukio; Kushiro, Yukitoshi.
In: IEEE Journal of Quantum Electronics, Vol. QE-21, No. 8, 08.1985, p. 1257-1263.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - BIAS-TEMPERATURE LIFE TESTS FOR PLANAR-TYPE VPE-GROWN INGAAS/INP HETEROSTRUCTURE APD'S.
AU - Matsushima, Yuichi
AU - Noda, Yukio
AU - Kushiro, Yukitoshi
PY - 1985/8
Y1 - 1985/8
N2 - Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.
AB - Following a discussion of device fabrication, bias-temperature life tests carried out at three temperature levels (80, 120, and 180 degree C) are described. Low-bias life tests (V//R equals 10 V) were tried at first for the diodes without a guard-ring structure for times exceeding 10,000 h. The heterostructure avalanche photodiodes (HAPDs) with the guard-ring have been tested under the condition of high electric field ( greater than 4 multiplied by 10**5 V/cm). The stable devices have been operating up to 6000 h under the high field condition even at 180 degree C. The HAPDs are still prototypes. Thus, the test results are considered to be encouraging as to achieving highly reliable photodiodes.
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UR - http://www.scopus.com/inward/citedby.url?scp=0022106357&partnerID=8YFLogxK
M3 - Article
AN - SCOPUS:0022106357
VL - QE-21
SP - 1257
EP - 1263
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 8
ER -