Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode

M. Kohda, Tomohiro Kita, Y. Ohno, F. Matsukura, H. Ohno

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35 Citations (Scopus)

Abstract

We investigated injection of spin polarized electrons in a (Ga,Mn)As/n +-GaAs Esaki diode (ED) by using a three-terminal device integrating a (Ga,Mn)As ED and a light emitting diode (LED). Electroluminescence polarization (PEL) from the LED was measured under the Faraday configuration as a function of bias voltages applied independently to the Esaki diode and to the LED. The maximum PEL of 32.4% was observed when the valence electrons near the Fermi energy of (Ga,Mn)As are ballistically injected into the LED.

Original languageEnglish
Article number012103
JournalApplied Physics Letters
Volume89
Issue number1
DOIs
Publication statusPublished - 2006 Jul 17
Externally publishedYes

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tunnel diodes
electron spin
light emitting diodes
injection
electric potential
electroluminescence
electrons
valence
polarization
configurations
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Bias voltage dependence of the electron spin injection studied in a three-terminal device based on a (Ga,Mn) As/ n+-GaAs Esaki diode. / Kohda, M.; Kita, Tomohiro; Ohno, Y.; Matsukura, F.; Ohno, H.

In: Applied Physics Letters, Vol. 89, No. 1, 012103, 17.07.2006.

Research output: Contribution to journalArticle

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AU - Matsukura, F.

AU - Ohno, H.

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