In this paper, we propose a new method for the bias-dependent parameter extraction of a MOSFET, which covers DC to over 100 GHz. The DC MOSFET model provided by the chip foundry is assumed to be correct, and the core DC characteristics are designed to be asymptotically recovered at low frequencies. This is carried out by representing the corrections required at high frequencies using a bias-dependent Y matrix, assuming that a parasitic nonlinear two-port matrix (Y-wrapper) is connected in parallel with the core MOSFET. The Y-wrapper can also handle the nonreciprocity of the parasitic components, that is, the asymmetry of the Y matrix. The reliability of the Y-wrapper model is confirmed through the simulation and measurement of a one-stage common-source amplifier operating at several bias points. This paper will not discuss about non-linearity.
- MOSFET modeling
- Millimeter wave
- Parameter extraction
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering