Biaxial strain dependence of exciton resonance energies in wurtzite GaN

Amane Shikanai, Takashi Azuhata, Takayuki Sota, Shigefusa Chichibu, Akito Kuramata, Kazuhiko Horino, Shuji Nakamura

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Abstract

We have systematically studied the strain dependence of the free-exciton resonance energies in wurtzite GaN by photoreflectance measurements using well-characterized samples. The experimental data have been analyzed using the appropriate Hamiltonian for the valence bands in wurtzite GaN and determined the values of the crystal field splitting, the spin-orbit splitting, the shear deformation potential constants, and the energy gap in the unstrained crystal. Discussions are given on the strain dependence of the energy gaps, of the effective masses, and of the binding energies for the free-exciton ground states as well as on the valence-band parameters.

Original languageEnglish
Pages (from-to)417-424
Number of pages8
JournalJournal of Applied Physics
Volume81
Issue number1
DOIs
Publication statusPublished - 1997 Jan 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Shikanai, A., Azuhata, T., Sota, T., Chichibu, S., Kuramata, A., Horino, K., & Nakamura, S. (1997). Biaxial strain dependence of exciton resonance energies in wurtzite GaN. Journal of Applied Physics, 81(1), 417-424. https://doi.org/10.1063/1.364074