Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy

K. Takeuchi, D. Kosemura, S. Yamamoto, Motohiro Tomita, K. Usuda, N. Sawamoto, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Anisotropic biaxial stress states in the high-Ge concentration Si1-xGex/Ge nanostructures were evaluated by oil-immersion Raman spectroscopy. Phonon deformation potentials (PDPs) are indispensable to convert the Raman frequency shift to stress in the Si1-xGex. Therefore, we investigated the accurate PDPs (p and q) of the Si1-xGex with the high Ge concentration by oil-immersion Raman spectroscopy. Using the derived PDPs, the clear uniaxial stress relaxation in the strained Si1-xGex nanostructure was observed.

Original languageEnglish
Title of host publicationULSI Process Integration 9
PublisherElectrochemical Society Inc.
Pages81-87
Number of pages7
Volume69
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

Fingerprint

Raman spectroscopy
Nanostructures
Substrates
Stress relaxation
Oils

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Takeuchi, K., Kosemura, D., Yamamoto, S., Tomita, M., Usuda, K., Sawamoto, N., & Ogura, A. (2015). Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy. In ULSI Process Integration 9 (10 ed., Vol. 69, pp. 81-87). Electrochemical Society Inc.. https://doi.org/10.1149/06910.0081ecst

Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy. / Takeuchi, K.; Kosemura, D.; Yamamoto, S.; Tomita, Motohiro; Usuda, K.; Sawamoto, N.; Ogura, A.

ULSI Process Integration 9. Vol. 69 10. ed. Electrochemical Society Inc., 2015. p. 81-87.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takeuchi, K, Kosemura, D, Yamamoto, S, Tomita, M, Usuda, K, Sawamoto, N & Ogura, A 2015, Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy. in ULSI Process Integration 9. 10 edn, vol. 69, Electrochemical Society Inc., pp. 81-87, Symposium on ULSI Process Integration 9 - 228th ECS Meeting, Phoenix, United States, 15/10/11. https://doi.org/10.1149/06910.0081ecst
Takeuchi K, Kosemura D, Yamamoto S, Tomita M, Usuda K, Sawamoto N et al. Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy. In ULSI Process Integration 9. 10 ed. Vol. 69. Electrochemical Society Inc. 2015. p. 81-87 https://doi.org/10.1149/06910.0081ecst
Takeuchi, K. ; Kosemura, D. ; Yamamoto, S. ; Tomita, Motohiro ; Usuda, K. ; Sawamoto, N. ; Ogura, A. / Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy. ULSI Process Integration 9. Vol. 69 10. ed. Electrochemical Society Inc., 2015. pp. 81-87
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