Biaxial stress evaluation in SiGe epitaxially grown on Ge substrate by oil-immersion raman spectroscopy

K. Takeuchi, D. Kosemura, S. Yamamoto, Motohiro Tomita, K. Usuda, N. Sawamoto, A. Ogura

Research output: Chapter in Book/Report/Conference proceedingConference contribution

9 Citations (Scopus)

Abstract

Anisotropic biaxial stress states in the high-Ge concentration Si1-xGex/Ge nanostructures were evaluated by oil-immersion Raman spectroscopy. Phonon deformation potentials (PDPs) are indispensable to convert the Raman frequency shift to stress in the Si1-xGex. Therefore, we investigated the accurate PDPs (p and q) of the Si1-xGex with the high Ge concentration by oil-immersion Raman spectroscopy. Using the derived PDPs, the clear uniaxial stress relaxation in the strained Si1-xGex nanostructure was observed.

Original languageEnglish
Title of host publicationULSI Process Integration 9
PublisherElectrochemical Society Inc.
Pages81-87
Number of pages7
Volume69
Edition10
ISBN (Electronic)9781607685395
DOIs
Publication statusPublished - 2015 Jan 1
Externally publishedYes
EventSymposium on ULSI Process Integration 9 - 228th ECS Meeting - Phoenix, United States
Duration: 2015 Oct 112015 Oct 15

Other

OtherSymposium on ULSI Process Integration 9 - 228th ECS Meeting
CountryUnited States
CityPhoenix
Period15/10/1115/10/15

ASJC Scopus subject areas

  • Engineering(all)

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