Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs

Takashi Kuroi, Youji Kawasaki, Yoshiyuki Ishigaki, Yasushi Kinoshita, Masahide Inuishi, Katsuhiro Tsukamoto, Natsuro Tsubouchi

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Fingerprint

Dive into the research topics of 'Bipolar transistor with a buried layer formed by high-energy ion implantation for subhalf-micron bipolar-complementary metal oxide semiconductor LSIs'. Together they form a unique fingerprint.

Engineering & Materials Science

Physics & Astronomy