Blue and blue/green laser diodes and LED-based display devices

W. Xie*, D. C. Grillo, M. Kobayashi, L. He, R. L. Gunshor, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)


We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - 1993 Feb 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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