Blue and blue/green laser diodes and LED-based display devices

W. Xie, D. C. Grillo, M. Kobayashi, L. He, R. L. Gunshor, H. Jeon, J. Ding, A. V. Nurmikko, G. C. Hua, N. Otsuka

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

We describe the performance of pn junction MQW diode lasers and LEDs which are grown on both p-type and n-type GaAs substrates. Efforts to minimize dislocations by lattice matching the II-VI region to the GaAs substrate in some cases resulted in obtaining dislocation densities below 105 cm-2. We have obtained pulsed high power, high quantum efficiency laser emission up to room temperature conditions, and continuous operation at liquid nitrogen temperatures. Efficient LED and display devices operate in the blue (490-494 nm) at room temperature.

Original languageEnglish
Pages (from-to)287-290
Number of pages4
JournalJournal of Crystal Growth
Volume127
Issue number1-4
DOIs
Publication statusPublished - 1993 Feb 2
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

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    Xie, W., Grillo, D. C., Kobayashi, M., He, L., Gunshor, R. L., Jeon, H., Ding, J., Nurmikko, A. V., Hua, G. C., & Otsuka, N. (1993). Blue and blue/green laser diodes and LED-based display devices. Journal of Crystal Growth, 127(1-4), 287-290. https://doi.org/10.1016/0022-0248(93)90623-5