Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

H. Jeon, J. Ding, W. Patterson, A. V. Nurmikko, W. Xie, D. C. Grillo, Masakazu Kobayashi, R. L. Gunshor

Research output: Contribution to journalArticle

497 Citations (Scopus)

Abstract

Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

Original languageEnglish
Pages (from-to)3619-3621
Number of pages3
JournalApplied Physics Letters
Volume59
Issue number27
DOIs
Publication statusPublished - 1991
Externally publishedYes

Fingerprint

injection lasers
semiconductor lasers
quantum wells
heterojunctions
buffers
output
configurations

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Jeon, H., Ding, J., Patterson, W., Nurmikko, A. V., Xie, W., Grillo, D. C., ... Gunshor, R. L. (1991). Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells. Applied Physics Letters, 59(27), 3619-3621. https://doi.org/10.1063/1.105625

Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells. / Jeon, H.; Ding, J.; Patterson, W.; Nurmikko, A. V.; Xie, W.; Grillo, D. C.; Kobayashi, Masakazu; Gunshor, R. L.

In: Applied Physics Letters, Vol. 59, No. 27, 1991, p. 3619-3621.

Research output: Contribution to journalArticle

Jeon, H, Ding, J, Patterson, W, Nurmikko, AV, Xie, W, Grillo, DC, Kobayashi, M & Gunshor, RL 1991, 'Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells', Applied Physics Letters, vol. 59, no. 27, pp. 3619-3621. https://doi.org/10.1063/1.105625
Jeon H, Ding J, Patterson W, Nurmikko AV, Xie W, Grillo DC et al. Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells. Applied Physics Letters. 1991;59(27):3619-3621. https://doi.org/10.1063/1.105625
Jeon, H. ; Ding, J. ; Patterson, W. ; Nurmikko, A. V. ; Xie, W. ; Grillo, D. C. ; Kobayashi, Masakazu ; Gunshor, R. L. / Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells. In: Applied Physics Letters. 1991 ; Vol. 59, No. 27. pp. 3619-3621.
@article{7affaf1f0e9040ba8cdae729adcd6081,
title = "Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells",
abstract = "Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.",
author = "H. Jeon and J. Ding and W. Patterson and Nurmikko, {A. V.} and W. Xie and Grillo, {D. C.} and Masakazu Kobayashi and Gunshor, {R. L.}",
year = "1991",
doi = "10.1063/1.105625",
language = "English",
volume = "59",
pages = "3619--3621",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "27",

}

TY - JOUR

T1 - Blue-green injection laser diodes in (Zn,Cd)Se/ZnSe quantum wells

AU - Jeon, H.

AU - Ding, J.

AU - Patterson, W.

AU - Nurmikko, A. V.

AU - Xie, W.

AU - Grillo, D. C.

AU - Kobayashi, Masakazu

AU - Gunshor, R. L.

PY - 1991

Y1 - 1991

N2 - Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

AB - Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.

UR - http://www.scopus.com/inward/record.url?scp=21544458682&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=21544458682&partnerID=8YFLogxK

U2 - 10.1063/1.105625

DO - 10.1063/1.105625

M3 - Article

VL - 59

SP - 3619

EP - 3621

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 27

ER -