Abstract
Laser diode action in the blue-green has been observed from (Zn,Cd)Se quantum wells within ZnSe/Zn(S,Se) p-n heterojunctions up to 250 K. Operation is reported for two different configurations for which the GaAs substrate serves either as the n- or p-type injecting contact. In pulsed operation, output powers exceeding 0.6 W have been measured in devices prepared on both n-type and p-type GaAs epitaxial buffer layers and substrates.
Original language | English |
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Pages (from-to) | 3619-3621 |
Number of pages | 3 |
Journal | Applied Physics Letters |
Volume | 59 |
Issue number | 27 |
DOIs | |
Publication status | Published - 1991 |
Externally published | Yes |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)