Blue-purplish InGaN quantum wells with shallow depth of exciton localization

Tetsuya Akasaka, Hideki Gotoh, Hedetoshi Nakano, Toshiki Makimoto

Research output: Contribution to journalArticle

22 Citations (Scopus)

Abstract

Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.

Original languageEnglish
Article number191902
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number19
DOIs
Publication statusPublished - 2005 May 9
Externally publishedYes

Fingerprint

excitons
quantum wells
indium
room temperature
atoms
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Blue-purplish InGaN quantum wells with shallow depth of exciton localization. / Akasaka, Tetsuya; Gotoh, Hideki; Nakano, Hedetoshi; Makimoto, Toshiki.

In: Applied Physics Letters, Vol. 86, No. 19, 191902, 09.05.2005, p. 1-3.

Research output: Contribution to journalArticle

Akasaka, Tetsuya ; Gotoh, Hideki ; Nakano, Hedetoshi ; Makimoto, Toshiki. / Blue-purplish InGaN quantum wells with shallow depth of exciton localization. In: Applied Physics Letters. 2005 ; Vol. 86, No. 19. pp. 1-3.
@article{016863464cce421ea65fae19db5d97b1,
title = "Blue-purplish InGaN quantum wells with shallow depth of exciton localization",
abstract = "Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.",
author = "Tetsuya Akasaka and Hideki Gotoh and Hedetoshi Nakano and Toshiki Makimoto",
year = "2005",
month = "5",
day = "9",
doi = "10.1063/1.1925314",
language = "English",
volume = "86",
pages = "1--3",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "19",

}

TY - JOUR

T1 - Blue-purplish InGaN quantum wells with shallow depth of exciton localization

AU - Akasaka, Tetsuya

AU - Gotoh, Hideki

AU - Nakano, Hedetoshi

AU - Makimoto, Toshiki

PY - 2005/5/9

Y1 - 2005/5/9

N2 - Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.

AB - Temperature-dependent time-resolved PL measurements were performed for blue-purplish InGaN multiple quantum wells grown on various kinds of underlying layers (ULs). By using an InGaN UL, excitons recombined radiatively at low temperatures, being confined in the shallow potential minima (7.1 meV), while they radiatively recombined two-dimensionally with high luminescent efficiency at around room temperature, being delocalized thermally from the potential minima. Therefore, the exciton localization is not necessary in order to obtain high luminescent efficiency, but it is important to annihilate the nonradiative recombination centers by incorporation of indium atoms into ULs.

UR - http://www.scopus.com/inward/record.url?scp=20844444752&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=20844444752&partnerID=8YFLogxK

U2 - 10.1063/1.1925314

DO - 10.1063/1.1925314

M3 - Article

AN - SCOPUS:20844444752

VL - 86

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 19

M1 - 191902

ER -