Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures

W. Xie, D. C. Grillo, R. L. Gunshor, Masakazu Kobayashi, G. C. Hua, N. Otsuka, H. Jeon, J. Ding, A. V. Nurmikko

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Abstract

The successful p doping of ZnSe by substitutional nitrogen using a plasma cell incorporated into the molecular beam epitaxy chamber has led to the development of electroluminescent devices based on carrier injection at a pn junction. The light emitting diode structures described here are grown on a GaAs substrate using a tetragonally distorted (In,Ga)As buffer layer to provide lattice matching between the substrate and the active II-VI region. The result of the incorporation of the buffer layer is an essentially dislocation-free active region. The letter discusses optical properties as well as the x-ray and transmission electron microscopy characterization of the quantum well device structures.

Original languageEnglish
Pages (from-to)463-465
Number of pages3
JournalApplied Physics Letters
Volume60
Issue number4
DOIs
Publication statusPublished - 1992
Externally publishedYes

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ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Xie, W., Grillo, D. C., Gunshor, R. L., Kobayashi, M., Hua, G. C., Otsuka, N., Jeon, H., Ding, J., & Nurmikko, A. V. (1992). Blue/green pn junction electroluminescence from ZnSe-based multiple quantum-well structures. Applied Physics Letters, 60(4), 463-465. https://doi.org/10.1063/1.106635