Body bias controlled SOI technology with HTI

Mikio Tsujiuchi, Yuuichi Hirano, Toshiaki Iwamatsu, Takashi Ipposhi, Shigeto Maegawa, Masahide Inuishi, Yuzuru Ohji

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

As the LSI process technology advances, increase of power consumption for the LSIs becomes major issue because of number of transistors and clock frequencies increase. For a reduction of the power consumption of the LSI, lowering supply voltage technology is one of the effective ways such as applying a dynamic threshold voltage (DT) structure as stated in J. P. Colinge (1987). However, a DT SOI MOSFET with T-shape or H-shape gates has disadvantages of area penalties and a gate parasitic capacitance increase. In this paper we describe actively body-bias controlled (ABC) SOI MOSFET technology with hybrid trench isolation (HTI) based in Y. Hirano et al. (2000). This structure doesn't need the T or H gates and realizes low-voltage and high-speed operation with controlling a body potential.

Original languageEnglish
Title of host publicationIMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages131-132
Number of pages2
ISBN (Electronic)0780384237, 9780780384231
DOIs
Publication statusPublished - 2004
Externally publishedYes
Event2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004 - Kyoto, Japan
Duration: 2004 Jul 262004 Jul 28

Other

Other2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004
CountryJapan
CityKyoto
Period04/7/2604/7/28

Fingerprint

Threshold voltage
Electric power utilization
Electric potential
Clocks
Transistors
Capacitance

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

Cite this

Tsujiuchi, M., Hirano, Y., Iwamatsu, T., Ipposhi, T., Maegawa, S., Inuishi, M., & Ohji, Y. (2004). Body bias controlled SOI technology with HTI. In IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai (pp. 131-132). [1566443] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IMFEDK.2004.1566443

Body bias controlled SOI technology with HTI. / Tsujiuchi, Mikio; Hirano, Yuuichi; Iwamatsu, Toshiaki; Ipposhi, Takashi; Maegawa, Shigeto; Inuishi, Masahide; Ohji, Yuzuru.

IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2004. p. 131-132 1566443.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Tsujiuchi, M, Hirano, Y, Iwamatsu, T, Ipposhi, T, Maegawa, S, Inuishi, M & Ohji, Y 2004, Body bias controlled SOI technology with HTI. in IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai., 1566443, Institute of Electrical and Electronics Engineers Inc., pp. 131-132, 2nd International Meeting for Future of Electron Devices, Kansai, IMFEDK 2004, Kyoto, Japan, 04/7/26. https://doi.org/10.1109/IMFEDK.2004.1566443
Tsujiuchi M, Hirano Y, Iwamatsu T, Ipposhi T, Maegawa S, Inuishi M et al. Body bias controlled SOI technology with HTI. In IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc. 2004. p. 131-132. 1566443 https://doi.org/10.1109/IMFEDK.2004.1566443
Tsujiuchi, Mikio ; Hirano, Yuuichi ; Iwamatsu, Toshiaki ; Ipposhi, Takashi ; Maegawa, Shigeto ; Inuishi, Masahide ; Ohji, Yuzuru. / Body bias controlled SOI technology with HTI. IMFEDK 2004 - International Meeting for Future of Electron Devices, Kansai. Institute of Electrical and Electronics Engineers Inc., 2004. pp. 131-132
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