Proces uzyskiwania silnych poła̧czeń spajalnych plłytek kwarcowych i silikonowych w niskiej temperaturze

Translated title of the contribution: Bonding of silicon and crystal quartz wafers at the minimized residual stresses

Yury Zimin, Toshitsugu Ueda, Joanna Pawłat

    Research output: Contribution to journalArticle

    4 Citations (Scopus)


    In this work, strong low-temperature bonding of silicon and crystalline quartz wafers, effecting in mechanical strength, which is close to initial materials has been described. High bonding strength is associated with minimization of the residual stresses, optimization of surface activation, and application of an electric field during annealing. The bonding has a wide application field because both, silicon and crystalline quartz are key materials for many devices including generators, high frequency filters, gyroscopes, microbalances of high stability, etc.

    Original languageUndefined/Unknown
    Pages (from-to)239-242
    Number of pages4
    JournalPrzeglad Elektrotechniczny
    Issue number8
    Publication statusPublished - 2011



    • Bonding
    • Crystal quartz
    • Plasma surface processing
    • Residual stress
    • Silicon

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering

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