Boron δ-doped (111) diamond solution gate field effect transistors

Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman

    Research output: Contribution to journalArticle

    11 Citations (Scopus)

    Abstract

    A solution gate field effect transistor (SGFET) using an oxidised boron δ-doped channel on (1. 1. 1) diamond is presented for the first time. Employing an optimised plasma chemical vapour deposition (PECVD) recipe to deposit δ-layers, SGFETs show improved current-voltage (I- V) characteristics in comparison to previous similar devices fabricated on (1. 0. 0) and polycrystalline diamond, where the device is shown to operate in the enhancement mode of operation, achieving channel pinch-off and drain-source current saturation within the electrochemical window of diamond. A maximum gain and transconductance of 3 and 200 μS/mm are extracted, showing comparable figures of merit to hydrogen-based SGFET. The oxidised device shows a site-binding model pH sensitivity of 36. mV/pH, displaying fast temporal responses. Considering the biocompatibility of diamond towards cells, the device's highly mutable transistor characteristics, pH sensitivity and stability against anodic oxidation common to hydrogen terminated diamond SGFET, oxidised boron δ-doped diamond SGFETs show promise for the recording of action potentials from electrogenic cells.

    Original languageEnglish
    Pages (from-to)152-157
    Number of pages6
    JournalBiosensors and Bioelectronics
    Volume33
    Issue number1
    DOIs
    Publication statusPublished - 2012 Mar 15

    Fingerprint

    Gates (transistor)
    Diamond
    Boron
    Diamonds
    Equipment and Supplies
    Hydrogen
    Anodic oxidation
    Transconductance
    Binding sites
    Current voltage characteristics
    Biocompatibility
    Action Potentials
    Chemical vapor deposition
    Transistors
    Deposits
    Binding Sites
    Plasmas

    Keywords

    • Delta-doping
    • Diamond
    • Field-effect transistor
    • ISFET
    • PH sensor

    ASJC Scopus subject areas

    • Biophysics
    • Biomedical Engineering
    • Biotechnology
    • Electrochemistry

    Cite this

    Edgington, R., Ruslinda, A. R., Sato, S., Ishiyama, Y., Tsuge, K., Ono, T., ... Jackman, R. B. (2012). Boron δ-doped (111) diamond solution gate field effect transistors. Biosensors and Bioelectronics, 33(1), 152-157. https://doi.org/10.1016/j.bios.2011.12.044

    Boron δ-doped (111) diamond solution gate field effect transistors. / Edgington, Robert; Ruslinda, A. Rahim; Sato, Syunsuke; Ishiyama, Yuichiro; Tsuge, Kyosuke; Ono, Tasuku; Kawarada, Hiroshi; Jackman, Richard B.

    In: Biosensors and Bioelectronics, Vol. 33, No. 1, 15.03.2012, p. 152-157.

    Research output: Contribution to journalArticle

    Edgington, R, Ruslinda, AR, Sato, S, Ishiyama, Y, Tsuge, K, Ono, T, Kawarada, H & Jackman, RB 2012, 'Boron δ-doped (111) diamond solution gate field effect transistors', Biosensors and Bioelectronics, vol. 33, no. 1, pp. 152-157. https://doi.org/10.1016/j.bios.2011.12.044
    Edgington R, Ruslinda AR, Sato S, Ishiyama Y, Tsuge K, Ono T et al. Boron δ-doped (111) diamond solution gate field effect transistors. Biosensors and Bioelectronics. 2012 Mar 15;33(1):152-157. https://doi.org/10.1016/j.bios.2011.12.044
    Edgington, Robert ; Ruslinda, A. Rahim ; Sato, Syunsuke ; Ishiyama, Yuichiro ; Tsuge, Kyosuke ; Ono, Tasuku ; Kawarada, Hiroshi ; Jackman, Richard B. / Boron δ-doped (111) diamond solution gate field effect transistors. In: Biosensors and Bioelectronics. 2012 ; Vol. 33, No. 1. pp. 152-157.
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