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Boron δ-doped (111) diamond solution gate field effect transistors
Robert Edgington, A. Rahim Ruslinda, Syunsuke Sato, Yuichiro Ishiyama, Kyosuke Tsuge, Tasuku Ono, Hiroshi Kawarada, Richard B. Jackman*
*Corresponding author for this work
Research output: Contribution to journal › Article › peer-review
13
Citations
(Scopus)