Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy

Yasuyuki Kobayashi, Hiroki Hibino, Tomohiro Nakamura, Tetsuya Akasaka, Toshiki Makimoto, Nobuo Matsumoto

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The growth of thin boron nitride (BN) films on graphitized 6H-SiC substrates was investigated in an attempt to reduce the large lattice mismatch between 6H-SiC and BN, which would improve the three-dimensional ordering in BN thin films grown by metalorganic vapor phase epitaxy (MOVPE). BN thin films were grown by low-pressure (300Torr) MOVPE using triethylboron and ammonia on graphitized 6H-SiC substrates with surfaces displaying (lxl) reconstruction as determined by low energy electron diffraction (LEED). The (1 × 1) surfaces were formed by annealing at 1500°C in ultrahigh vacuum with a base pressure of 10-10 Torr. The LEED patterns showed that the surfaces were covered with single-crystal graphite several monolayers thick. X-ray diffraction revealed that the c-axis lattice constant of the BN was 6.72 Å, which is close to the 6.66 Å of bulk hexagonal BN. In contrast, BN films grown on non-graphitized 6H-SiC substrates by MOVPE under the same conditions were mostly amorphous. Use of a graphitized 6H-SiC substrate covered with graphite several monolayers thick improves the degree of three-dimensional ordering in BN thin films grown by MOVPE.

Original languageEnglish
Pages (from-to)2554-2557
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number4 B
DOIs
Publication statusPublished - 2007 Apr 24
Externally publishedYes

Fingerprint

Metallorganic vapor phase epitaxy
Boron nitride
boron nitrides
vapor phase epitaxy
Thin films
Substrates
thin films
Low energy electron diffraction
Monolayers
Graphite
electron diffraction
graphite
base pressure
Lattice mismatch
Ultrahigh vacuum
Diffraction patterns
ultrahigh vacuum
Lattice constants
ammonia
Ammonia

Keywords

  • 6H-SiC substrate
  • Boron nitride
  • Graphitization
  • MOVPE

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy. / Kobayashi, Yasuyuki; Hibino, Hiroki; Nakamura, Tomohiro; Akasaka, Tetsuya; Makimoto, Toshiki; Matsumoto, Nobuo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 46, No. 4 B, 24.04.2007, p. 2554-2557.

Research output: Contribution to journalArticle

Kobayashi, Yasuyuki ; Hibino, Hiroki ; Nakamura, Tomohiro ; Akasaka, Tetsuya ; Makimoto, Toshiki ; Matsumoto, Nobuo. / Boron nitride thin films grown on graphitized 6H-SiC substrates by metalorganic vapor phase epitaxy. In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers. 2007 ; Vol. 46, No. 4 B. pp. 2554-2557.
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