Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

Minoru Osada, Takayoshi Sasaki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

Original languageEnglish
Title of host publication5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009
Pages131-136
Number of pages6
Publication statusPublished - 2009
Externally publishedYes
Event5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, United States
Duration: 2009 Apr 212009 Apr 23

Other

Other5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009
CountryUnited States
CityDenver, CO
Period09/4/2109/4/23

Fingerprint

Nanosheets
Oxides
Fabrication
Multilayers
Titanium
Lamellar structures
Substrates
High resolution transmission electron microscopy
Leakage currents
Permittivity
Current density
High-k dielectric
Costs
Temperature
titanium dioxide

Keywords

  • Bottom-up fabrication
  • High-k dielectrics
  • Layer-by-layer assembly
  • Oxide nanosheet

ASJC Scopus subject areas

  • Hardware and Architecture
  • Ceramics and Composites

Cite this

Osada, M., & Sasaki, T. (2009). Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. In 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009 (pp. 131-136)

Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. / Osada, Minoru; Sasaki, Takayoshi.

5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. 2009. p. 131-136.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Osada, M & Sasaki, T 2009, Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. in 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. pp. 131-136, 5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009, Denver, CO, United States, 09/4/21.
Osada M, Sasaki T. Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. In 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. 2009. p. 131-136
Osada, Minoru ; Sasaki, Takayoshi. / Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. 2009. pp. 131-136
@inproceedings{b261e093631a4cee87cc32623a9e0ef4,
title = "Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block",
abstract = "We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.",
keywords = "Bottom-up fabrication, High-k dielectrics, Layer-by-layer assembly, Oxide nanosheet",
author = "Minoru Osada and Takayoshi Sasaki",
year = "2009",
language = "English",
isbn = "9781615673742",
pages = "131--136",
booktitle = "5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009",

}

TY - GEN

T1 - Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

AU - Osada, Minoru

AU - Sasaki, Takayoshi

PY - 2009

Y1 - 2009

N2 - We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

AB - We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

KW - Bottom-up fabrication

KW - High-k dielectrics

KW - Layer-by-layer assembly

KW - Oxide nanosheet

UR - http://www.scopus.com/inward/record.url?scp=84879864872&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879864872&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84879864872

SN - 9781615673742

SP - 131

EP - 136

BT - 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009

ER -