Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

Minoru Osada; Takayoshi Sasaki

Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

Minoru Osada, Takayoshi Sasaki

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO₃ substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (ε_r ∼125) and low leakage current density (J < 10^-7 A/cm ²) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

Original language	English
Title of host publication	5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009
Pages	131-136
Number of pages	6
Publication status	Published - 2009
Externally published	Yes
Event	5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009 - Denver, CO, United States Duration: 2009 Apr 21 → 2009 Apr 23

Other

Other	5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009
Country/Territory	United States
City	Denver, CO
Period	09/4/21 → 09/4/23

Keywords

Bottom-up fabrication
High-k dielectrics
Layer-by-layer assembly
Oxide nanosheet

ASJC Scopus subject areas

Hardware and Architecture
Ceramics and Composites

Cite this

Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. / Osada, Minoru; Sasaki, Takayoshi.

5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. 2009. p. 131-136.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Osada, M & Sasaki, T 2009, Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block. in 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009. pp. 131-136, 5th International Conference on Ceramic Interconnect and Ceramic Microsystems Technologies, CICMT 2009, Denver, CO, United States, 09/4/21.

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title = "Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block",

abstract = "We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.",

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author = "Minoru Osada and Takayoshi Sasaki",

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AU - Osada, Minoru

AU - Sasaki, Takayoshi

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N2 - We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

AB - We present a novel fabrication procedure for high-k dielectric nanofilms by using of titania nanosheet as a building block. Layer-by-layer assembly of titania nanosheets with the use of the atomically flat SrRuO3 substrate is advantageous as a means of the fabrication for atomically uniform multilayer high-k nanofilms. High-resolution transmission electron microscopy revealed that these multilayer nanofilms are composed of the well-ordered lamellar structure corresponding to the layer-by-layer assembly, and the film-substrate interface is atomically flat without interfacial dead layer. These nanofilms exhibited both high dielectric constant (εr ∼125) and low leakage current density (J < 10-7 A/cm 2) even for thickness down to 10 nm. These results, as well as the simple, low-cost and low-temperature features of the layer-by-layer assembly, our approach provides a rational design and construction of high-k devices.

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KW - High-k dielectrics

KW - Layer-by-layer assembly

KW - Oxide nanosheet

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BT - 5th IMAPS/ACerS International Conference and Exhibition on Ceramic Interconnect and Ceramic Microsystems Technologies 2009, CICMT 2009

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Y2 - 21 April 2009 through 23 April 2009

ER -

Bottom-up fabrication of high-k dielectric nanofilms using oxide nanosheets as a building block

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Keywords

ASJC Scopus subject areas

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