BOUNDARY CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS.

Keiichi Koyanagi, Kunio Hane, Tokio Suzuki

Research output: Contribution to journalArticle

17 Citations (Scopus)

Abstract

The dependence of the increase of current in a transistor of n** plus -p-n-n** plus type on time is investigated, and current mode second breakdown (CSB) and thermal mode second breakdown (TSB) are discriminated by the duration of the delay time before which second breakdown occurs. The boundary conditions between CSB and TSB in steady state are clarified. The critical voltage between CSB and TSB is determined by the width of the n layer, the immobile charge density of the n layer, and the injected electron density from the emitter to the n layer. The numerical analysis was in qualitative agreement with the experimental results.

Original languageEnglish
Pages (from-to)672-678
Number of pages7
JournalIEEE Transactions on Electron Devices
VolumeED-24
Issue number6
Publication statusPublished - 1977 Jun
Externally publishedYes

Fingerprint

Transistors
transistors
breakdown
Boundary conditions
boundary conditions
Charge density
Carrier concentration
Numerical analysis
Time delay
Electric potential
Hot Temperature
numerical analysis
emitters
time lag
electric potential

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

BOUNDARY CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS. / Koyanagi, Keiichi; Hane, Kunio; Suzuki, Tokio.

In: IEEE Transactions on Electron Devices, Vol. ED-24, No. 6, 06.1977, p. 672-678.

Research output: Contribution to journalArticle

@article{95af32b3a8e84bfb8741b511bf3e7824,
title = "BOUNDARY CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS.",
abstract = "The dependence of the increase of current in a transistor of n** plus -p-n-n** plus type on time is investigated, and current mode second breakdown (CSB) and thermal mode second breakdown (TSB) are discriminated by the duration of the delay time before which second breakdown occurs. The boundary conditions between CSB and TSB in steady state are clarified. The critical voltage between CSB and TSB is determined by the width of the n layer, the immobile charge density of the n layer, and the injected electron density from the emitter to the n layer. The numerical analysis was in qualitative agreement with the experimental results.",
author = "Keiichi Koyanagi and Kunio Hane and Tokio Suzuki",
year = "1977",
month = "6",
language = "English",
volume = "ED-24",
pages = "672--678",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",

}

TY - JOUR

T1 - BOUNDARY CONDITIONS BETWEEN CURRENT MODE AND THERMAL MODE SECOND BREAKDOWN IN EPITAXIAL PLANAR TRANSISTORS.

AU - Koyanagi, Keiichi

AU - Hane, Kunio

AU - Suzuki, Tokio

PY - 1977/6

Y1 - 1977/6

N2 - The dependence of the increase of current in a transistor of n** plus -p-n-n** plus type on time is investigated, and current mode second breakdown (CSB) and thermal mode second breakdown (TSB) are discriminated by the duration of the delay time before which second breakdown occurs. The boundary conditions between CSB and TSB in steady state are clarified. The critical voltage between CSB and TSB is determined by the width of the n layer, the immobile charge density of the n layer, and the injected electron density from the emitter to the n layer. The numerical analysis was in qualitative agreement with the experimental results.

AB - The dependence of the increase of current in a transistor of n** plus -p-n-n** plus type on time is investigated, and current mode second breakdown (CSB) and thermal mode second breakdown (TSB) are discriminated by the duration of the delay time before which second breakdown occurs. The boundary conditions between CSB and TSB in steady state are clarified. The critical voltage between CSB and TSB is determined by the width of the n layer, the immobile charge density of the n layer, and the injected electron density from the emitter to the n layer. The numerical analysis was in qualitative agreement with the experimental results.

UR - http://www.scopus.com/inward/record.url?scp=0017503347&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0017503347&partnerID=8YFLogxK

M3 - Article

VL - ED-24

SP - 672

EP - 678

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 6

ER -