Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method

K. Ishii, T. Morita, D. Isshiki, Y. Ohki

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.

Original languageEnglish
Title of host publicationAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena
Editors Anon
PublisherPubl by IEEE
Pages355-358
Number of pages4
ISBN (Print)0780309669
Publication statusPublished - 1993 Dec 1
EventProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena - Pocono Manor, PA, USA
Duration: 1993 Oct 171993 Oct 20

Publication series

NameAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena
ISSN (Print)0084-9162

Other

OtherProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena
CityPocono Manor, PA, USA
Period93/10/1793/10/20

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Industrial and Manufacturing Engineering
  • Building and Construction

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  • Cite this

    Ishii, K., Morita, T., Isshiki, D., & Ohki, Y. (1993). Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. In Anon (Ed.), Annual Report - Conference on Electrical Insulation and Dielectric Phenomena (pp. 355-358). (Annual Report - Conference on Electrical Insulation and Dielectric Phenomena). Publ by IEEE.