Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method

K. Ishii, T. Morita, D. Isshiki, Yoshimichi Ohki

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    1 Citation (Scopus)

    Abstract

    For higher integration, higher speed, and smaller power consumption, Amorphous SiO2 thin films have become even more downsized to the submicron scale. One of the best approaches in solving the difficulty of SiO2 deposition at a low temperature and in conformity to the underlayer (in the MOS structure), is to store it in tetraethoxysilane (TEOS). Presented in the paper were the deposition of SiO2 in TEOS using the plasma CVD method and some properties including the dielectric strength.

    Original languageEnglish
    Title of host publicationAnnual Report - Conference on Electrical Insulation and Dielectric Phenomena
    Editors Anon
    Place of PublicationPiscataway, NJ, United States
    PublisherPubl by IEEE
    Pages355-358
    Number of pages4
    ISBN (Print)0780309669
    Publication statusPublished - 1993
    EventProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena - Pocono Manor, PA, USA
    Duration: 1993 Oct 171993 Oct 20

    Other

    OtherProceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena
    CityPocono Manor, PA, USA
    Period93/10/1793/10/20

    Fingerprint

    Plasma CVD
    Thin films
    Amorphous films
    Polymers
    Electric power utilization
    Temperature

    ASJC Scopus subject areas

    • Electrical and Electronic Engineering
    • Industrial and Manufacturing Engineering
    • Building and Construction

    Cite this

    Ishii, K., Morita, T., Isshiki, D., & Ohki, Y. (1993). Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. In Anon (Ed.), Annual Report - Conference on Electrical Insulation and Dielectric Phenomena (pp. 355-358). Piscataway, NJ, United States: Publ by IEEE.

    Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. / Ishii, K.; Morita, T.; Isshiki, D.; Ohki, Yoshimichi.

    Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. ed. / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. p. 355-358.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Ishii, K, Morita, T, Isshiki, D & Ohki, Y 1993, Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. in Anon (ed.), Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. Publ by IEEE, Piscataway, NJ, United States, pp. 355-358, Proceedings of the 1993 IEEE Conference on Electrical Insulation and Dielectric Phenomena, Pocono Manor, PA, USA, 93/10/17.
    Ishii K, Morita T, Isshiki D, Ohki Y. Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. In Anon, editor, Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. Piscataway, NJ, United States: Publ by IEEE. 1993. p. 355-358
    Ishii, K. ; Morita, T. ; Isshiki, D. ; Ohki, Yoshimichi. / Breakdown characteristics of thin SiO2 films deposited from TEOS using plasma CVD method. Annual Report - Conference on Electrical Insulation and Dielectric Phenomena. editor / Anon. Piscataway, NJ, United States : Publ by IEEE, 1993. pp. 355-358
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