Brillouin scattering study in the GaN epitaxial layer

Y. Takagi, M. Ahart, T. Azuhata, T. Sota, K. Suzuki, S. Nakamura

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Abstract

We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

Original languageEnglish
Pages (from-to)547-549
Number of pages3
JournalPhysica B: Condensed Matter
Volume219-220
Issue number1-4
DOIs
Publication statusPublished - 1996 Apr 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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    Takagi, Y., Ahart, M., Azuhata, T., Sota, T., Suzuki, K., & Nakamura, S. (1996). Brillouin scattering study in the GaN epitaxial layer. Physica B: Condensed Matter, 219-220(1-4), 547-549. https://doi.org/10.1016/0921-4526(95)00807-1