Brillouin scattering study in the GaN epitaxial layer

Y. Takagi, M. Ahart, T. Azuhata, Takayuki Sota, K. Suzuki, S. Nakamura

    Research output: Contribution to journalArticle

    62 Citations (Scopus)

    Abstract

    We have investigated the elastic properties of a GaN epitaxial layer on a sapphire substrate by Brillouin scattering in the backward and 90 ° scattering geometries. A sample of high optical quality grown by the two-flow MOCVD method with a complex structure of In0.05Ga0.95N(0.05 μm)/GaN(2 μm)/sapphire was used. The weak spectra were not simple due to the boundaries and the InGaN thin film. The elastic constants of GaN were estimated and compared with those obtained from X-ray diffraction.

    Original languageEnglish
    Pages (from-to)547-549
    Number of pages3
    JournalPhysica B: Condensed Matter
    Volume219-220
    Issue number1-4
    DOIs
    Publication statusPublished - 1996 Apr 1

    Fingerprint

    Brillouin scattering
    Aluminum Oxide
    Epitaxial layers
    Sapphire
    sapphire
    elastic properties
    Metallorganic chemical vapor deposition
    Elastic constants
    scattering
    metalorganic chemical vapor deposition
    Scattering
    X ray diffraction
    Thin films
    Geometry
    Substrates
    thin films
    geometry
    diffraction
    x rays

    ASJC Scopus subject areas

    • Materials Science(all)
    • Condensed Matter Physics

    Cite this

    Takagi, Y., Ahart, M., Azuhata, T., Sota, T., Suzuki, K., & Nakamura, S. (1996). Brillouin scattering study in the GaN epitaxial layer. Physica B: Condensed Matter, 219-220(1-4), 547-549. https://doi.org/10.1016/0921-4526(95)00807-1

    Brillouin scattering study in the GaN epitaxial layer. / Takagi, Y.; Ahart, M.; Azuhata, T.; Sota, Takayuki; Suzuki, K.; Nakamura, S.

    In: Physica B: Condensed Matter, Vol. 219-220, No. 1-4, 01.04.1996, p. 547-549.

    Research output: Contribution to journalArticle

    Takagi, Y, Ahart, M, Azuhata, T, Sota, T, Suzuki, K & Nakamura, S 1996, 'Brillouin scattering study in the GaN epitaxial layer', Physica B: Condensed Matter, vol. 219-220, no. 1-4, pp. 547-549. https://doi.org/10.1016/0921-4526(95)00807-1
    Takagi Y, Ahart M, Azuhata T, Sota T, Suzuki K, Nakamura S. Brillouin scattering study in the GaN epitaxial layer. Physica B: Condensed Matter. 1996 Apr 1;219-220(1-4):547-549. https://doi.org/10.1016/0921-4526(95)00807-1
    Takagi, Y. ; Ahart, M. ; Azuhata, T. ; Sota, Takayuki ; Suzuki, K. ; Nakamura, S. / Brillouin scattering study in the GaN epitaxial layer. In: Physica B: Condensed Matter. 1996 ; Vol. 219-220, No. 1-4. pp. 547-549.
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