Brillouin scattering study of bulk GaN

M. Yamaguchi, T. Yagi, T. Sota, T. Deguchi, K. Shimada, S. Nakamura

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Abstract

High-resolution Brillouin scattering experiments have been performed for a high-quality free-standing gallium nitride (GaN) substrate. Elastic stiffness constants are reported. A comparison is made with the results of an earlier study for a GaN thin film on sapphire substrate.

Original languageEnglish
Pages (from-to)8502-8504
Number of pages3
JournalJournal of Applied Physics
Volume85
Issue number12
DOIs
Publication statusPublished - 1999 Jun 15

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ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Yamaguchi, M., Yagi, T., Sota, T., Deguchi, T., Shimada, K., & Nakamura, S. (1999). Brillouin scattering study of bulk GaN. Journal of Applied Physics, 85(12), 8502-8504. https://doi.org/10.1063/1.370635