Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band

Kouichi Akahane, Naokatsu Yamamoto, Tetsuya Kawanishi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.

Original languageEnglish
Title of host publicationAdvanced Materials Research
Pages269-273
Number of pages5
Volume871
DOIs
Publication statusPublished - 2014
Externally publishedYes
Event2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013 - , Singapore
Duration: 2013 Nov 152013 Dec 16

Publication series

NameAdvanced Materials Research
Volume871
ISSN (Print)10226680

Other

Other2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013
CountrySingapore
Period13/11/1513/12/16

Fingerprint

Electroluminescence
Semiconductor quantum dots
Wavelength
Full width at half maximum
Ground state
Fiber optics
Defects
Communication
Substrates
Temperature

Keywords

  • Electroluminescence
  • Quantum dot
  • Strain-compensation

ASJC Scopus subject areas

  • Engineering(all)

Cite this

Akahane, K., Yamamoto, N., & Kawanishi, T. (2014). Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. In Advanced Materials Research (Vol. 871, pp. 269-273). (Advanced Materials Research; Vol. 871). https://doi.org/10.4028/www.scientific.net/AMR.871.269

Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.

Advanced Materials Research. Vol. 871 2014. p. 269-273 (Advanced Materials Research; Vol. 871).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Akahane, K, Yamamoto, N & Kawanishi, T 2014, Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. in Advanced Materials Research. vol. 871, Advanced Materials Research, vol. 871, pp. 269-273, 2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013, Singapore, 13/11/15. https://doi.org/10.4028/www.scientific.net/AMR.871.269
Akahane K, Yamamoto N, Kawanishi T. Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. In Advanced Materials Research. Vol. 871. 2014. p. 269-273. (Advanced Materials Research). https://doi.org/10.4028/www.scientific.net/AMR.871.269
Akahane, Kouichi ; Yamamoto, Naokatsu ; Kawanishi, Tetsuya. / Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. Advanced Materials Research. Vol. 871 2014. pp. 269-273 (Advanced Materials Research).
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