TY - GEN
T1 - Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band
AU - Akahane, Kouichi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
N1 - Copyright:
Copyright 2014 Elsevier B.V., All rights reserved.
PY - 2014
Y1 - 2014
N2 - We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.
AB - We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.
KW - Electroluminescence
KW - Quantum dot
KW - Strain-compensation
UR - http://www.scopus.com/inward/record.url?scp=84891942248&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891942248&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.871.269
DO - 10.4028/www.scientific.net/AMR.871.269
M3 - Conference contribution
AN - SCOPUS:84891942248
SN - 9783037859674
T3 - Advanced Materials Research
SP - 269
EP - 273
BT - Applied Mechanics, Fluid and Solid Mechanics
T2 - 2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013
Y2 - 15 November 2013 through 16 December 2013
ER -