Abstract
We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.
| Original language | English |
|---|---|
| Title of host publication | Advanced Materials Research |
| Pages | 269-273 |
| Number of pages | 5 |
| Volume | 871 |
| DOIs | |
| Publication status | Published - 2014 |
| Externally published | Yes |
| Event | 2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013 - , Singapore Duration: 2013 Nov 15 → 2013 Dec 16 |
Publication series
| Name | Advanced Materials Research |
|---|---|
| Volume | 871 |
| ISSN (Print) | 10226680 |
Other
| Other | 2013 International Conference on Applied Mechanics, Fluid and Solid Mechanics, AMFSM 2013 |
|---|---|
| Country | Singapore |
| Period | 13/11/15 → 13/12/16 |
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Keywords
- Electroluminescence
- Quantum dot
- Strain-compensation
ASJC Scopus subject areas
- Engineering(all)
Cite this
Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band. / Akahane, Kouichi; Yamamoto, Naokatsu; Kawanishi, Tetsuya.
Advanced Materials Research. Vol. 871 2014. p. 269-273 (Advanced Materials Research; Vol. 871).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Broad-band electroluminescence from highly stacked InAs quantum dot at telecom-band
AU - Akahane, Kouichi
AU - Yamamoto, Naokatsu
AU - Kawanishi, Tetsuya
PY - 2014
Y1 - 2014
N2 - We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.
AB - We have developed a growth procedure for increasing the number of stacked layers of InAs quantum dots (QDs) on an InP(311)B substrate that is resistant to defects and dislocations. In this work, we also developed a modulated stacking structure consisting of various size QDs for electroluminescence (EL). This promotes broad-band emission because each QD-distributed wide range can emit a different wavelength. The EL spectrum of this sample was measured with pulsed current injection. There was a strong emission from the ground state at approximately 1524 nm which is suitable for fiber-optic communications, with an injection current of 100 mA at room temperature. The full width at half maximum was 213 nm. Modulated stacking using this strain-compensation technique is thus a useful way to expand the gain wavelength.
KW - Electroluminescence
KW - Quantum dot
KW - Strain-compensation
UR - http://www.scopus.com/inward/record.url?scp=84891942248&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891942248&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMR.871.269
DO - 10.4028/www.scientific.net/AMR.871.269
M3 - Conference contribution
SN - 9783037859674
VL - 871
T3 - Advanced Materials Research
SP - 269
EP - 273
BT - Advanced Materials Research
ER -