Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique

Naokatsu Yamamoto; Kouichi Akahane; Tetsuya Kawanishi; Hideyuki Sotobayashi; Hiroki Fujioka; Hiroshi Takai

doi:10.1002/pssc.201000476

Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique

Naokatsu Yamamoto^*, Kouichi Akahane, Tetsuya Kawanishi, Hideyuki Sotobayashi, Hiroki Fujioka, Hiroshi Takai

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

29 Citations (Scopus)

Abstract

A broadband light source for a wavelength range of around 1.2-1.3 μm can be fabricated using a multi-stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub-nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are considered useful in obtaining a high-quality and ultra-broadband QD optical gain material for the laser and/or optical amplifier. A broadband (>75 nm bandwidth) and bright (few tenths of a mW) light emission in its waveband is successfully demonstrated from a QD laser diode using a modulated QD optical gain with the SSNS technique.

Original language	English
Pages (from-to)	328-330
Number of pages	3
Journal	Physica Status Solidi (C) Current Topics in Solid State Physics
Volume	8
Issue number	2
DOIs	https://doi.org/10.1002/pssc.201000476
Publication status	Published - 2011 Feb
Externally published	Yes

Keywords

Broadband optical gain
Infrared light source
Laser
Nano-structure
Quantum dot

ASJC Scopus subject areas

Condensed Matter Physics

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10.1002/pssc.201000476

Cite this

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abstract = "A broadband light source for a wavelength range of around 1.2-1.3 μm can be fabricated using a multi-stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub-nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are considered useful in obtaining a high-quality and ultra-broadband QD optical gain material for the laser and/or optical amplifier. A broadband (>75 nm bandwidth) and bright (few tenths of a mW) light emission in its waveband is successfully demonstrated from a QD laser diode using a modulated QD optical gain with the SSNS technique.",

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AU - Yamamoto, Naokatsu

AU - Akahane, Kouichi

AU - Kawanishi, Tetsuya

AU - Sotobayashi, Hideyuki

AU - Fujioka, Hiroki

AU - Takai, Hiroshi

PY - 2011/2

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AB - A broadband light source for a wavelength range of around 1.2-1.3 μm can be fabricated using a multi-stacked and modulated InAs/InGaAs quantum dot (QD) structure with the sandwich sub-nano separator (SSNS) technique. These techniques, such as use of the modulated QD structure and SSNS structure, are considered useful in obtaining a high-quality and ultra-broadband QD optical gain material for the laser and/or optical amplifier. A broadband (>75 nm bandwidth) and bright (few tenths of a mW) light emission in its waveband is successfully demonstrated from a QD laser diode using a modulated QD optical gain with the SSNS technique.

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KW - Infrared light source

KW - Laser

KW - Nano-structure

KW - Quantum dot

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Broadband light source using modulated quantum dot structures with sandwiched sub-nano separator (SSNS) technique

Abstract

Keywords

ASJC Scopus subject areas

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