Bulk-layout-compatible 0.18-μm SOI-CMOS technology using body-tied partial-trench-isolation (PTI)

Yuuichi Hirano, Shigenobu Maeda, Takuji Matsumoto, Koji Nii, Toshiaki Iwamatsu, Yasuo Yamaguchi, Takashi Ipposhi, Hiroshi Kawashima, Shigeto Maegawa, Masahide Inuishi, Tadashi Nishimura

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8 Citations (Scopus)

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Engineering & Materials Science

Chemical Compounds