Buried piezoresistive sensors by means of MeV ion implantation

T. Nishimoto, Shuichi Shoji, M. Esashi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

High energy (MeV) ion implantation was applied to fabricate a buried piezoresistor for microsensors. This method makes it possible to bury a p+ layer without a highly doped n+ overlayer. The buried piezoresistor has the advantage of stability because the influence of surface electrical field variation to the resistance is much smaller than that of the conventional piezoresistor. Differential pressure type and drag force type micro liquid flow sensors were fabricated using the buried piezoresistor. The buried piezoresistor formed by MeV ion implantation acts stably enough to detect the strain even when it is used in water without passivation.

Original languageEnglish
Pages (from-to)249-253
Number of pages5
JournalSensors and Actuators: A. Physical
Volume43
Issue number1-3
DOIs
Publication statusPublished - 1994
Externally publishedYes

Fingerprint

Ion implantation
ion implantation
Microsensors
differential pressure
liquid flow
sensors
Sensors
Passivation
passivity
drag
Drag
Water
Liquids
water
energy

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Mechanical Engineering
  • Instrumentation

Cite this

Buried piezoresistive sensors by means of MeV ion implantation. / Nishimoto, T.; Shoji, Shuichi; Esashi, M.

In: Sensors and Actuators: A. Physical, Vol. 43, No. 1-3, 1994, p. 249-253.

Research output: Contribution to journalArticle

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