Buried piezoresistive sensors by means of MeV ion implantation

T. Nishimoto; S. Shoji; M. Esashi

doi:10.1016/0924-4247(93)00673-R

Buried piezoresistive sensors by means of MeV ion implantation

T. Nishimoto^*, S. Shoji, M. Esashi

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

High energy (MeV) ion implantation was applied to fabricate a buried piezoresistor for microsensors. This method makes it possible to bury a p⁺ layer without a highly doped n⁺ overlayer. The buried piezoresistor has the advantage of stability because the influence of surface electrical field variation to the resistance is much smaller than that of the conventional piezoresistor. Differential pressure type and drag force type micro liquid flow sensors were fabricated using the buried piezoresistor. The buried piezoresistor formed by MeV ion implantation acts stably enough to detect the strain even when it is used in water without passivation.

Original language	English
Pages (from-to)	249-253
Number of pages	5
Journal	Sensors and Actuators: A. Physical
Volume	43
Issue number	1-3
DOIs	https://doi.org/10.1016/0924-4247(93)00673-R
Publication status	Published - 1994 May
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Instrumentation
Condensed Matter Physics
Surfaces, Coatings and Films
Metals and Alloys
Electrical and Electronic Engineering

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10.1016/0924-4247(93)00673-R

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title = "Buried piezoresistive sensors by means of MeV ion implantation",

abstract = "High energy (MeV) ion implantation was applied to fabricate a buried piezoresistor for microsensors. This method makes it possible to bury a p+ layer without a highly doped n+ overlayer. The buried piezoresistor has the advantage of stability because the influence of surface electrical field variation to the resistance is much smaller than that of the conventional piezoresistor. Differential pressure type and drag force type micro liquid flow sensors were fabricated using the buried piezoresistor. The buried piezoresistor formed by MeV ion implantation acts stably enough to detect the strain even when it is used in water without passivation.",

author = "T. Nishimoto and S. Shoji and M. Esashi",

note = "Funding Information: This work has been partly supportedb y a Grant under The MonbusyoI nternationalS cientificR esearch Program No. 03044019.",

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T1 - Buried piezoresistive sensors by means of MeV ion implantation

AU - Nishimoto, T.

AU - Shoji, S.

AU - Esashi, M.

N1 - Funding Information: This work has been partly supportedb y a Grant under The MonbusyoI nternationalS cientificR esearch Program No. 03044019.

PY - 1994/5

Y1 - 1994/5

N2 - High energy (MeV) ion implantation was applied to fabricate a buried piezoresistor for microsensors. This method makes it possible to bury a p+ layer without a highly doped n+ overlayer. The buried piezoresistor has the advantage of stability because the influence of surface electrical field variation to the resistance is much smaller than that of the conventional piezoresistor. Differential pressure type and drag force type micro liquid flow sensors were fabricated using the buried piezoresistor. The buried piezoresistor formed by MeV ion implantation acts stably enough to detect the strain even when it is used in water without passivation.

AB - High energy (MeV) ion implantation was applied to fabricate a buried piezoresistor for microsensors. This method makes it possible to bury a p+ layer without a highly doped n+ overlayer. The buried piezoresistor has the advantage of stability because the influence of surface electrical field variation to the resistance is much smaller than that of the conventional piezoresistor. Differential pressure type and drag force type micro liquid flow sensors were fabricated using the buried piezoresistor. The buried piezoresistor formed by MeV ion implantation acts stably enough to detect the strain even when it is used in water without passivation.

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Buried piezoresistive sensors by means of MeV ion implantation

Abstract

ASJC Scopus subject areas

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