C-axis parallel oriented A1N film resonator fabricated by ion-beam assisted RF magnetron sputtering

Masashi Suzuki, Takahiko Yanagitani

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Citations (Scopus)

Abstract

c-axis parallel oriented AlN films excite only pure shear wave. These films are suitable for thickness shear mode film resonators and SH-SAW devices. However, c-axis in the wurzite film such as ZnO and AlN tends to grow normal to the substrate. We previously found that c-axis parallel orientation is induced by ion-beam irradiation during deposition in ZnO films. In this study, we investigated the orientation control of AlN films by using ion-beam assisted RF magnetron sputtering. c-axis parallel oriented AlN films were obtained in the sample deposited under 3 kV accelerated ion beam irradiation The direction of c-axis corresponded to the ion beam direction. c-axis parallel AlN film SMR with asymmetric Bragg reflector was then prepared. Pure shear mode was excited in the resonator. Effective k 15′ of the resonator was determined to be 0.052, and TCF was found to be -30.2 ppm/°C.

Original languageEnglish
Title of host publicationIEEE International Ultrasonics Symposium, IUS
Pages1230-1233
Number of pages4
DOIs
Publication statusPublished - 2011
Externally publishedYes
Event2011 IEEE International Ultrasonics Symposium, IUS 2011 - Orlando, FL, United States
Duration: 2011 Oct 182011 Oct 21

Other

Other2011 IEEE International Ultrasonics Symposium, IUS 2011
CountryUnited States
CityOrlando, FL
Period11/10/1811/10/21

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Keywords

  • AlN
  • c-axis parallel film
  • crystalline orientation control
  • pure shear mode
  • SMR

ASJC Scopus subject areas

  • Acoustics and Ultrasonics

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