C-H surface diamond field effect transistors for high temperature (400 °c) and high voltage (500V) operation

Hiroshi Kawarada, H. Tsuboi, T. Naruo, T. Yamada, D. Xu, A. Daicho, T. Saito, A. Hiraiwa

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    Abstract

    By forming a highly stable Al2O3 gate oxide on a C-H bonded channel of diamond, high-temperature, and high-voltage metal-oxide-semiconductor field-effect transistor (MOSFET) has been realized. From room temperature to 400°C (673K), the variation of maximum drain-current is within 30% at a given gate bias. The maximum breakdown voltage (VB) of the MOSFET without a field plate is 600V at a gate-drain distance (LGD) of 7. We fabricated some MOSFETs for which VB/LGD>100V/These values are comparable to those of lateral SiC or GaN FETs. The Al2O3 was deposited on the C-H surface by atomic layer deposition (ALD) at 450°C using H2O as an oxidant. The ALD at relatively high temperature results in stable p-type conduction and FET operation at 400°C in vacuum. The drain current density and transconductance normalized by the gate width are almost constant from room temperature to 400°C in vacuum and are about 10 times higher than those of boron-doped diamond FETs.

    Original languageEnglish
    Article number013510
    JournalApplied Physics Letters
    Volume105
    Issue number1
    DOIs
    Publication statusPublished - 2014 Jul 7

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    ASJC Scopus subject areas

    • Physics and Astronomy (miscellaneous)

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