C-Si interface on SiO2/(1 1 1) diamond p-MOSFETs with high mobility and excellent normally-off operation

Xiaohua Zhu, Te Bi, Xiaolu Yuan, Yu Hao Chang, Runming Zhang, Yu Fu, Juping Tu, Yabo Huang, Jinlong Liu*, Chengming Li, Hiroshi Kawarada

*Corresponding author for this work

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