Abstract
In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.
| Original language | English |
|---|---|
| Title of host publication | 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings |
| Publisher | Institute of Electrical and Electronics Engineers Inc. |
| Pages | 94-96 |
| Number of pages | 3 |
| ISBN (Electronic) | 9781467377942 |
| DOIs | |
| Publication status | Published - 2016 Jan 8 |
| Externally published | Yes |
| Event | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan Duration: 2015 Aug 26 → 2015 Aug 28 |
Other
| Other | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 |
|---|---|
| Country | Japan |
| City | Sendai |
| Period | 15/8/26 → 15/8/28 |
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Keywords
- CMOS technology
- Millimeter-wave
- Process parameter
- Terahertz
- Transmission line
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering
Cite this
Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. / Takano, Kyoya; Katayama, Kosuke; Yoshida, Takeshi; Amakawa, Shuhei; Fujishima, Minoru; Hara, Shinsuke; Kasamatsu, Akifumi.
2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 94-96 7377898.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz
AU - Takano, Kyoya
AU - Katayama, Kosuke
AU - Yoshida, Takeshi
AU - Amakawa, Shuhei
AU - Fujishima, Minoru
AU - Hara, Shinsuke
AU - Kasamatsu, Akifumi
PY - 2016/1/8
Y1 - 2016/1/8
N2 - In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.
AB - In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.
KW - CMOS technology
KW - Millimeter-wave
KW - Process parameter
KW - Terahertz
KW - Transmission line
UR - http://www.scopus.com/inward/record.url?scp=84963570166&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84963570166&partnerID=8YFLogxK
U2 - 10.1109/RFIT.2015.7377898
DO - 10.1109/RFIT.2015.7377898
M3 - Conference contribution
AN - SCOPUS:84963570166
SP - 94
EP - 96
BT - 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
ER -