@inproceedings{14bb16b2152e4a3f941d3f1c3f3e48ad,
title = "Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz",
abstract = "In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.",
keywords = "CMOS technology, Millimeter-wave, Process parameter, Terahertz, Transmission line",
author = "Kyoya Takano and Kosuke Katayama and Takeshi Yoshida and Shuhei Amakawa and Minoru Fujishima and Shinsuke Hara and Akifumi Kasamatsu",
note = "Publisher Copyright: {\textcopyright} 2015 IEEE.; IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 ; Conference date: 26-08-2015 Through 28-08-2015",
year = "2016",
month = jan,
day = "8",
doi = "10.1109/RFIT.2015.7377898",
language = "English",
series = "2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
pages = "94--96",
booktitle = "2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings",
}