Abstract
In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.
Original language | English |
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Title of host publication | 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings |
Publisher | Institute of Electrical and Electronics Engineers Inc. |
Pages | 94-96 |
Number of pages | 3 |
ISBN (Electronic) | 9781467377942 |
DOIs | |
Publication status | Published - 2016 Jan 8 |
Externally published | Yes |
Event | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan Duration: 2015 Aug 26 → 2015 Aug 28 |
Other
Other | IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 |
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Country | Japan |
City | Sendai |
Period | 15/8/26 → 15/8/28 |
Keywords
- CMOS technology
- Millimeter-wave
- Process parameter
- Terahertz
- Transmission line
ASJC Scopus subject areas
- Computer Networks and Communications
- Electrical and Electronic Engineering