Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

Kyoya Takano, Kosuke Katayama, Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima, Shinsuke Hara, Akifumi Kasamatsu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

Original languageEnglish
Title of host publication2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages94-96
Number of pages3
ISBN (Electronic)9781467377942
DOIs
Publication statusPublished - 2016 Jan 8
Externally publishedYes
EventIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan
Duration: 2015 Aug 262015 Aug 28

Other

OtherIEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
CountryJapan
CitySendai
Period15/8/2615/8/28

Fingerprint

Electromagnetic fields
Electric lines
Calibration

Keywords

  • CMOS technology
  • Millimeter-wave
  • Process parameter
  • Terahertz
  • Transmission line

ASJC Scopus subject areas

  • Computer Networks and Communications
  • Electrical and Electronic Engineering

Cite this

Takano, K., Katayama, K., Yoshida, T., Amakawa, S., Fujishima, M., Hara, S., & Kasamatsu, A. (2016). Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 94-96). [7377898] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377898

Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. / Takano, Kyoya; Katayama, Kosuke; Yoshida, Takeshi; Amakawa, Shuhei; Fujishima, Minoru; Hara, Shinsuke; Kasamatsu, Akifumi.

2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 94-96 7377898.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Takano, K, Katayama, K, Yoshida, T, Amakawa, S, Fujishima, M, Hara, S & Kasamatsu, A 2016, Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. in 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings., 7377898, Institute of Electrical and Electronics Engineers Inc., pp. 94-96, IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015, Sendai, Japan, 15/8/26. https://doi.org/10.1109/RFIT.2015.7377898
Takano K, Katayama K, Yoshida T, Amakawa S, Fujishima M, Hara S et al. Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 94-96. 7377898 https://doi.org/10.1109/RFIT.2015.7377898
Takano, Kyoya ; Katayama, Kosuke ; Yoshida, Takeshi ; Amakawa, Shuhei ; Fujishima, Minoru ; Hara, Shinsuke ; Kasamatsu, Akifumi. / Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 94-96
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