Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

Kyoya Takano; Kosuke Katayama; Takeshi Yoshida; Shuhei Amakawa; Minoru Fujishima; Shinsuke Hara; Akifumi Kasamatsu

doi:10.1109/RFIT.2015.7377898

Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

Kyoya Takano, Kosuke Katayama, Takeshi Yoshida, Shuhei Amakawa, Minoru Fujishima, Shinsuke Hara, Akifumi Kasamatsu

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

Original language	English
Title of host publication	2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	94-96
Number of pages	3
ISBN (Electronic)	9781467377942
DOIs	https://doi.org/10.1109/RFIT.2015.7377898
Publication status	Published - 2016 Jan 8
Externally published	Yes
Event	IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Sendai, Japan Duration: 2015 Aug 26 → 2015 Aug 28

Other

Other	IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015
Country	Japan
City	Sendai
Period	15/8/26 → 15/8/28

Fingerprint

Keywords

CMOS technology
Millimeter-wave
Process parameter
Terahertz
Transmission line

ASJC Scopus subject areas

Computer Networks and Communications
Electrical and Electronic Engineering

Cite this

Takano, K., Katayama, K., Yoshida, T., Amakawa, S., Fujishima, M., Hara, S., & Kasamatsu, A. (2016). Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings (pp. 94-96). [7377898] Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/RFIT.2015.7377898

Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. / Takano, Kyoya; Katayama, Kosuke; Yoshida, Takeshi; Amakawa, Shuhei; Fujishima, Minoru; Hara, Shinsuke; Kasamatsu, Akifumi.

2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. p. 94-96 7377898.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takano, K, Katayama, K, Yoshida, T, Amakawa, S, Fujishima, M, Hara, S & Kasamatsu, A 2016, Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. in 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings., 7377898, Institute of Electrical and Electronics Engineers Inc., pp. 94-96, IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015, Sendai, Japan, 15/8/26. https://doi.org/10.1109/RFIT.2015.7377898

Takano K, Katayama K, Yoshida T, Amakawa S, Fujishima M, Hara S et al. Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. In 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2016. p. 94-96. 7377898 https://doi.org/10.1109/RFIT.2015.7377898

Takano, Kyoya ; Katayama, Kosuke ; Yoshida, Takeshi ; Amakawa, Shuhei ; Fujishima, Minoru ; Hara, Shinsuke ; Kasamatsu, Akifumi. / Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz. 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2016. pp. 94-96

@inproceedings{14bb16b2152e4a3f941d3f1c3f3e48ad,

title = "Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz",

abstract = "In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.",

keywords = "CMOS technology, Millimeter-wave, Process parameter, Terahertz, Transmission line",

author = "Kyoya Takano and Kosuke Katayama and Takeshi Yoshida and Shuhei Amakawa and Minoru Fujishima and Shinsuke Hara and Akifumi Kasamatsu",

year = "2016",

month = jan

day = "8",

doi = "10.1109/RFIT.2015.7377898",

language = "English",

pages = "94--96",

booktitle = "2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

address = "United States",

note = "IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 ; Conference date: 26-08-2015 Through 28-08-2015",

}

TY - GEN

T1 - Calibration of process parameters for electromagnetic field analysis of CMOS devices up to 330 GHz

AU - Takano, Kyoya

AU - Katayama, Kosuke

AU - Yoshida, Takeshi

AU - Amakawa, Shuhei

AU - Fujishima, Minoru

AU - Hara, Shinsuke

AU - Kasamatsu, Akifumi

PY - 2016/1/8

Y1 - 2016/1/8

N2 - In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

AB - In this paper, we propose a calibration method for the parameters of a CMOS process and the structures of transmission lines used in the calibration. The process parameters of each dielectric layer can be determined separately using this method. To verify the proposed method, test structures of four types of transmission lines were fabricated using a 40 nm CMOS process. It was shown that the results of EM simulation using the process parameters calibrated by the proposed method were in good agreement with the measurement results up to 330 GHz.

KW - CMOS technology

KW - Millimeter-wave

KW - Process parameter

KW - Terahertz

KW - Transmission line

UR - http://www.scopus.com/inward/record.url?scp=84963570166&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84963570166&partnerID=8YFLogxK

U2 - 10.1109/RFIT.2015.7377898

DO - 10.1109/RFIT.2015.7377898

M3 - Conference contribution

AN - SCOPUS:84963570166

SP - 94

EP - 96

BT - 2015 IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - IEEE International Symposium on Radio-Frequency Integration Technology, RFIT 2015

Y2 - 26 August 2015 through 28 August 2015

ER -

Access to Document

10.1109/RFIT.2015.7377898