CARBIDE FORMATION FROM A MONTMORILLONITE-POLYACRYLONITRILE INTERCALATION COMPOUND BY CARBOTHERMAL REDUCTION.

Yoshiyuki Sugahara, Kenichi Sugimoto, Kazuyuki Kuroda, Chuzo Kato

    Research output: Contribution to journalArticle

    7 Citations (Scopus)

    Abstract

    The montmorillonite-polyacrylonitrile (PAN) intercalation compound was heated in Ar flow for the application of clay-organic complexes to the preparation of carbide through the carbothermal reduction. beta -SiC was formed at 1200 degree C and both alpha -SiC and beta -SiC were detected above 1300 degree C. SiO//2 component was reduced without forming any crystalline compounds, while Al//2O//3 component formed Mg-Al-O compound. Compared with the reactions of a montmorillonite-carbon mixture, it was clarified that the presence of PAN in the interlayer space led to the formation of alpha -SiC and suppressed the crystallization of oxides.

    Original languageEnglish
    Pages (from-to)38-43
    Number of pages6
    JournalYogyo Kyokai Shi/Journal of the Ceramic Society of Japan
    Volume94
    Issue number1
    Publication statusPublished - 1986

    Fingerprint

    Bentonite
    Carbothermal reduction
    Intercalation compounds
    polyacrylonitrile
    Polyacrylonitriles
    montmorillonite
    Clay minerals
    intercalation
    carbides
    Carbides
    Crystallization
    Oxides
    clays
    interlayers
    Clay
    Carbon
    crystallization
    Crystalline materials
    preparation
    oxides

    ASJC Scopus subject areas

    • Engineering(all)

    Cite this

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    title = "CARBIDE FORMATION FROM A MONTMORILLONITE-POLYACRYLONITRILE INTERCALATION COMPOUND BY CARBOTHERMAL REDUCTION.",
    abstract = "The montmorillonite-polyacrylonitrile (PAN) intercalation compound was heated in Ar flow for the application of clay-organic complexes to the preparation of carbide through the carbothermal reduction. beta -SiC was formed at 1200 degree C and both alpha -SiC and beta -SiC were detected above 1300 degree C. SiO//2 component was reduced without forming any crystalline compounds, while Al//2O//3 component formed Mg-Al-O compound. Compared with the reactions of a montmorillonite-carbon mixture, it was clarified that the presence of PAN in the interlayer space led to the formation of alpha -SiC and suppressed the crystallization of oxides.",
    author = "Yoshiyuki Sugahara and Kenichi Sugimoto and Kazuyuki Kuroda and Chuzo Kato",
    year = "1986",
    language = "English",
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    journal = "Nippon Seramikkusu Kyokai Gakujutsu Ronbunshi/Journal of the Ceramic Society of Japan",
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    T1 - CARBIDE FORMATION FROM A MONTMORILLONITE-POLYACRYLONITRILE INTERCALATION COMPOUND BY CARBOTHERMAL REDUCTION.

    AU - Sugahara, Yoshiyuki

    AU - Sugimoto, Kenichi

    AU - Kuroda, Kazuyuki

    AU - Kato, Chuzo

    PY - 1986

    Y1 - 1986

    N2 - The montmorillonite-polyacrylonitrile (PAN) intercalation compound was heated in Ar flow for the application of clay-organic complexes to the preparation of carbide through the carbothermal reduction. beta -SiC was formed at 1200 degree C and both alpha -SiC and beta -SiC were detected above 1300 degree C. SiO//2 component was reduced without forming any crystalline compounds, while Al//2O//3 component formed Mg-Al-O compound. Compared with the reactions of a montmorillonite-carbon mixture, it was clarified that the presence of PAN in the interlayer space led to the formation of alpha -SiC and suppressed the crystallization of oxides.

    AB - The montmorillonite-polyacrylonitrile (PAN) intercalation compound was heated in Ar flow for the application of clay-organic complexes to the preparation of carbide through the carbothermal reduction. beta -SiC was formed at 1200 degree C and both alpha -SiC and beta -SiC were detected above 1300 degree C. SiO//2 component was reduced without forming any crystalline compounds, while Al//2O//3 component formed Mg-Al-O compound. Compared with the reactions of a montmorillonite-carbon mixture, it was clarified that the presence of PAN in the interlayer space led to the formation of alpha -SiC and suppressed the crystallization of oxides.

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