Carbon atomic layer doping in algaas by metalorganic chemical vapor deposition and its application to a p-type modulation doped structure

Toshiki Makimoto, Naoki Kobayashi

Research output: Contribution to journalArticle

Abstract

Carbon (C) atomic layer doping in AlGaAs is demonstrated. During undoped AlGaAs growth by conventional low-pressure metalorganic chemical vapor deposition, C atomic layer doping is performed by supplying trimethylgallium onto AlGaAs surfaces under arsine-free conditions. C incorporation increases with increasing Al composition of the surface layer onto which trimethylgallium is supplied, suggesting that the C incorporation mechanism is that As atoms of the AlGaAs surface are partially replaced by C atoms of methyl groups to become acceptors. The capacitance-voltage measurement of the C atomic layer doped AlGaAs shows a carrier profile with a full width at half-maximum as narrow as 8.0 nm at a peak carrier concentration of 2.1ȕ1018 cm-3, indicating that the diffusion of C atoms in AlGaAs is not serious during growth at 610ŶC. A p-type modulation doped AlGaAs/GaAs structure was fabricated using C atomic layer doping, and a mobility of 1.3ȕ105 cm2/Vƃs was obtained at 1.5 K for a sheet hole density of 3.9ȕ1011 cm-2 Because of the high quality two-dimensional hole gas, a region limited by acoustic phonon scattering can be seen in the temperature dependence of hole mobility.

Original languageEnglish
Pages (from-to)L1300
JournalJapanese Journal of Applied Physics
Volume32
Issue number7
DOIs
Publication statusPublished - 1993
Externally publishedYes

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Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
aluminum gallium arsenides
Doping (additives)
Modulation
modulation
Atoms
Carbon
carbon
Low pressure chemical vapor deposition
Phonon scattering
Hole mobility
Capacitance measurement
Voltage measurement
Full width at half maximum
Carrier concentration
Acoustics
atoms
Chemical analysis
Gases

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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title = "Carbon atomic layer doping in algaas by metalorganic chemical vapor deposition and its application to a p-type modulation doped structure",
abstract = "Carbon (C) atomic layer doping in AlGaAs is demonstrated. During undoped AlGaAs growth by conventional low-pressure metalorganic chemical vapor deposition, C atomic layer doping is performed by supplying trimethylgallium onto AlGaAs surfaces under arsine-free conditions. C incorporation increases with increasing Al composition of the surface layer onto which trimethylgallium is supplied, suggesting that the C incorporation mechanism is that As atoms of the AlGaAs surface are partially replaced by C atoms of methyl groups to become acceptors. The capacitance-voltage measurement of the C atomic layer doped AlGaAs shows a carrier profile with a full width at half-maximum as narrow as 8.0 nm at a peak carrier concentration of 2.1ȕ1018 cm-3, indicating that the diffusion of C atoms in AlGaAs is not serious during growth at 610ŶC. A p-type modulation doped AlGaAs/GaAs structure was fabricated using C atomic layer doping, and a mobility of 1.3ȕ105 cm2/Vƃs was obtained at 1.5 K for a sheet hole density of 3.9ȕ1011 cm-2 Because of the high quality two-dimensional hole gas, a region limited by acoustic phonon scattering can be seen in the temperature dependence of hole mobility.",
author = "Toshiki Makimoto and Naoki Kobayashi",
year = "1993",
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language = "English",
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TY - JOUR

T1 - Carbon atomic layer doping in algaas by metalorganic chemical vapor deposition and its application to a p-type modulation doped structure

AU - Makimoto, Toshiki

AU - Kobayashi, Naoki

PY - 1993

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N2 - Carbon (C) atomic layer doping in AlGaAs is demonstrated. During undoped AlGaAs growth by conventional low-pressure metalorganic chemical vapor deposition, C atomic layer doping is performed by supplying trimethylgallium onto AlGaAs surfaces under arsine-free conditions. C incorporation increases with increasing Al composition of the surface layer onto which trimethylgallium is supplied, suggesting that the C incorporation mechanism is that As atoms of the AlGaAs surface are partially replaced by C atoms of methyl groups to become acceptors. The capacitance-voltage measurement of the C atomic layer doped AlGaAs shows a carrier profile with a full width at half-maximum as narrow as 8.0 nm at a peak carrier concentration of 2.1ȕ1018 cm-3, indicating that the diffusion of C atoms in AlGaAs is not serious during growth at 610ŶC. A p-type modulation doped AlGaAs/GaAs structure was fabricated using C atomic layer doping, and a mobility of 1.3ȕ105 cm2/Vƃs was obtained at 1.5 K for a sheet hole density of 3.9ȕ1011 cm-2 Because of the high quality two-dimensional hole gas, a region limited by acoustic phonon scattering can be seen in the temperature dependence of hole mobility.

AB - Carbon (C) atomic layer doping in AlGaAs is demonstrated. During undoped AlGaAs growth by conventional low-pressure metalorganic chemical vapor deposition, C atomic layer doping is performed by supplying trimethylgallium onto AlGaAs surfaces under arsine-free conditions. C incorporation increases with increasing Al composition of the surface layer onto which trimethylgallium is supplied, suggesting that the C incorporation mechanism is that As atoms of the AlGaAs surface are partially replaced by C atoms of methyl groups to become acceptors. The capacitance-voltage measurement of the C atomic layer doped AlGaAs shows a carrier profile with a full width at half-maximum as narrow as 8.0 nm at a peak carrier concentration of 2.1ȕ1018 cm-3, indicating that the diffusion of C atoms in AlGaAs is not serious during growth at 610ŶC. A p-type modulation doped AlGaAs/GaAs structure was fabricated using C atomic layer doping, and a mobility of 1.3ȕ105 cm2/Vƃs was obtained at 1.5 K for a sheet hole density of 3.9ȕ1011 cm-2 Because of the high quality two-dimensional hole gas, a region limited by acoustic phonon scattering can be seen in the temperature dependence of hole mobility.

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