Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs

Naoki Kobayashi, Toshiki Makimoto

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

By an in-situ surface photo-absorption study of the ALE process and carbon atomic layer doping, an other than the so far proposed carbon incorporation mechanism via formation of a CH2 bridge bond has been found, i.e. carbon incorporation via an exchange reaction between dissociated CH3 radicals from TMG and As atoms of the surface onto which TMG is deposited. We also propose a method for reducing the carbon incorporation by thermal desorption of the CH3 groups.

Original languageEnglish
Pages (from-to)284-289
Number of pages6
JournalApplied Surface Science
Volume82-83
Issue numberC
DOIs
Publication statusPublished - 1994 Dec 2
Externally publishedYes

Fingerprint

Atomic layer epitaxy
atomic layer epitaxy
aluminum gallium arsenides
Carbon
carbon
Thermal desorption
photoabsorption
desorption
Doping (additives)
Atoms
gallium arsenide
atoms

ASJC Scopus subject areas

  • Physical and Theoretical Chemistry
  • Surfaces, Coatings and Films
  • Condensed Matter Physics

Cite this

Carbon incorporation mechanism in atomic layer epitaxy of GaAs and AlGaAs. / Kobayashi, Naoki; Makimoto, Toshiki.

In: Applied Surface Science, Vol. 82-83, No. C, 02.12.1994, p. 284-289.

Research output: Contribution to journalArticle

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