Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto, Shi Shya Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

Original languageEnglish
Pages (from-to)L797-L798
JournalJapanese journal of applied physics
Volume31
Issue number6
DOIs
Publication statusPublished - 1992 Jun
Externally publishedYes

Keywords

  • Aigaas/GaAs
  • Carbon doping
  • Fme
  • Hole mobility
  • Mocvd
  • P-type
  • Two-dimensional hole gas

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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