Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition

Toshiki Makimoto, Shi Shya Chang

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

Carbon atoms are used as a p-type dopant for modulation-doped p-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor deposition. Carbon impurities are effectively doped into AlGaAs layers by flow-rate modulation epitaxy, which is a modified method of metalorganic chemical vapor deposition. A mobility of 6.0×104 cm2/V·s is obtained at 13 K for a sheet carrier concentration of 4.1×1011 cm-2, indicating that a high quality two-dimensional hole gas is realized by abrupt heterointerfaces and sharp carbon doping profiles.

Original languageEnglish
Pages (from-to)L797-L798
JournalJapanese Journal of Applied Physics
Volume31
Issue number6
DOIs
Publication statusPublished - 1992
Externally publishedYes

Fingerprint

Metallorganic chemical vapor deposition
metalorganic chemical vapor deposition
aluminum gallium arsenides
Heterojunctions
Modulation
modulation
Carbon
carbon
Doping (additives)
Epitaxial growth
epitaxy
Carrier concentration
flow velocity
Flow rate
Impurities
impurities
Atoms
profiles
Gases
gases

Keywords

  • Aigaas/GaAs
  • Carbon doping
  • Fme
  • Hole mobility
  • Mocvd
  • P-type
  • Two-dimensional hole gas

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Carbon modulation-doped P-AlGaAs/GaAs heterostructures grown by metalorganic chemical vapor Deposition. / Makimoto, Toshiki; Chang, Shi Shya.

In: Japanese Journal of Applied Physics, Vol. 31, No. 6, 1992, p. L797-L798.

Research output: Contribution to journalArticle

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