Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - Effect of exciton and free carrier thermodynamic

S. L. Lu, T. Ushiyama, A. Tackeuchi, S. Muto

Research output: Contribution to journalConference article

Abstract

Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.

Original languageEnglish
Pages (from-to)78-81
Number of pages4
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Volume5
Issue number1
DOIs
Publication statusPublished - 2008 Jun 30
Event15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan
Duration: 2007 Jul 232007 Jul 27

ASJC Scopus subject areas

  • Condensed Matter Physics

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