Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.
|Number of pages||4|
|Journal||Physica Status Solidi (C) Current Topics in Solid State Physics|
|Publication status||Published - 2008 Jun 30|
|Event||15th International Conference on Nonequilibrium Carrier Dynamics in Semiconductors, HCIS15 - Tokyo, Japan|
Duration: 2007 Jul 23 → 2007 Jul 27
ASJC Scopus subject areas
- Condensed Matter Physics