Carrier density dependence of nonresonant carrier tunneling in GaAs double quantum wells - Effect of exciton and free carrier thermodynamic

S. L. Lu, T. Ushiyama, Atsushi Tackeuchi, S. Muto

    Research output: Contribution to journalArticle

    Abstract

    Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.

    Original languageEnglish
    Pages (from-to)78-81
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 2008

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    excitons
    quantum wells
    thermodynamics
    free electrons
    aluminum gallium arsenides
    pumps
    temperature dependence
    probes
    sensitivity

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

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    abstract = "Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.",
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    AU - Lu, S. L.

    AU - Ushiyama, T.

    AU - Tackeuchi, Atsushi

    AU - Muto, S.

    PY - 2008

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    AB - Nonresonant carrier tunneling dynamics in GaAs/AlGaAs double quantum wells as a function of carrier density was investigated by using time-resolved pump and probe measurements. At low temperatures, tunneling time increases with increasing carrier density. At high temperatures, no dependence of tunneling time on carrier density was shown. This unique behavior is well explained by the thermodynamic effect between excitons and free carriers as a function of carrier density on the tunneling process. At low temperatures, a larger fraction of excitons at a higher carrier density, which have a relatively slow tunneling time in contrast to free electrons, leads to a slow tunneling time. The independence of the tunneling time at high temperatures is attributed to the insensitivity of the exciton population to the increased carrier density.

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