Abstract
We have investigated the electron mobility (μ) dependence and the electron quantized energy dependence of the electron spin relaxation time (τs) in n-type and undopcd GaAs/AlGaAs multiple quantum wells at room temperature. τS ∝ μ-1 obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.
| Original language | English |
|---|---|
| Pages (from-to) | 2549-2551 |
| Number of pages | 3 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 38 |
| Issue number | 4 B |
| DOIs | |
| Publication status | Published - 1999 |
Keywords
- Gaas/algaas quantum well
- Spin orbit interaction
- Spin relaxation
ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
Fingerprint Dive into the research topics of 'Carrier mobility dependence of electron spin relaxation in GaAs quantum wells'. Together they form a unique fingerprint.
Cite this
Terauchi, R., Ohno, Y., Adachi, T., Sato, A., Matsukura, F., Tackeuchi, A., & Ohno, H. (1999). Carrier mobility dependence of electron spin relaxation in GaAs quantum wells. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 38(4 B), 2549-2551. https://doi.org/10.1143/jjap.38.2549