Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

Ryota Terauchi, Yuzo Ohno, Taro Adachi, Arao Sato, Fumihiro Matsukura, Atsushi Tackeuchi, Hideo Ohno

Research output: Contribution to journalArticle

35 Citations (Scopus)

Abstract

We have investigated the electron mobility (μ) dependence and the electron quantized energy dependence of the electron spin relaxation time (τs) in n-type and undopcd GaAs/AlGaAs multiple quantum wells at room temperature. τS ∝ μ-1 obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.

Original languageEnglish
Pages (from-to)2549-2551
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume38
Issue number4 B
DOIs
Publication statusPublished - 1999

Keywords

  • Gaas/algaas quantum well
  • Spin orbit interaction
  • Spin relaxation

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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