Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

Ryota Terauchi; Yuzo Ohno; Taro Adachi; Arao Sato; Fumihiro Matsukura; Atsushi Tackeuchi; Hideo Ohno

doi:10.1143/jjap.38.2549

Carrier mobility dependence of electron spin relaxation in GaAs quantum wells

Ryota Terauchi, Yuzo Ohno, Taro Adachi, Arao Sato, Fumihiro Matsukura, Atsushi Tackeuchi, Hideo Ohno

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

35 Citations (Scopus)

Abstract

We have investigated the electron mobility (μ) dependence and the electron quantized energy dependence of the electron spin relaxation time (τ_s) in n-type and undopcd GaAs/AlGaAs multiple quantum wells at room temperature. τ_S ∝ μ^-1 obtained from the experimental results is consistent with the theoretical prediction based on the D'yakonov-Perel' theory.

Original language	English
Pages (from-to)	2549-2551
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	4 B
DOIs	https://doi.org/10.1143/jjap.38.2549
Publication status	Published - 1999

Keywords

Gaas/algaas quantum well
Spin orbit interaction
Spin relaxation

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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Carrier mobility dependence of electron spin relaxation in GaAs quantum wells. / Terauchi, Ryota; Ohno, Yuzo; Adachi, Taro; Sato, Arao; Matsukura, Fumihiro; Tackeuchi, Atsushi; Ohno, Hideo.

In: Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 38, No. 4 B, 1999, p. 2549-2551.

Research output: Contribution to journal › Article › peer-review

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AU - Adachi, Taro

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AU - Tackeuchi, Atsushi

AU - Ohno, Hideo

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