Abstract
The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
| Original language | English |
|---|---|
| Pages (from-to) | 1-5 |
| Number of pages | 5 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 127 |
| DOIs | |
| Publication status | Published - 2014 |
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Keywords
- Carrier recombination dynamics
- InGaAsP
- Molecular beam epitaxy
- Solar cell
ASJC Scopus subject areas
- Renewable Energy, Sustainability and the Environment
- Electronic, Optical and Magnetic Materials
- Surfaces, Coatings and Films
Cite this
Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. / Ji, Lian; Lu, Shulong; Wu, Yuanyuan; Dai, Pai; Bian, Lifeng; Arimochi, Masayuki; Watanabe, Tomomasa; Asaka, Naohiro; Uemura, Mitsunori; Tackeuchi, Atsushi; Uchida, Shiro; Yang, Hui.
In: Solar Energy Materials and Solar Cells, Vol. 127, 2014, p. 1-5.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
AU - Ji, Lian
AU - Lu, Shulong
AU - Wu, Yuanyuan
AU - Dai, Pai
AU - Bian, Lifeng
AU - Arimochi, Masayuki
AU - Watanabe, Tomomasa
AU - Asaka, Naohiro
AU - Uemura, Mitsunori
AU - Tackeuchi, Atsushi
AU - Uchida, Shiro
AU - Yang, Hui
PY - 2014
Y1 - 2014
N2 - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
AB - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
KW - Carrier recombination dynamics
KW - InGaAsP
KW - Molecular beam epitaxy
KW - Solar cell
UR - http://www.scopus.com/inward/record.url?scp=84899698114&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899698114&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2014.03.051
DO - 10.1016/j.solmat.2014.03.051
M3 - Article
VL - 127
SP - 1
EP - 5
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
ER -