TY - JOUR
T1 - Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells
AU - Ji, Lian
AU - Lu, Shulong
AU - Wu, Yuanyuan
AU - Dai, Pai
AU - Bian, Lifeng
AU - Arimochi, Masayuki
AU - Watanabe, Tomomasa
AU - Asaka, Naohiro
AU - Uemura, Mitsunori
AU - Tackeuchi, Atsushi
AU - Uchida, Shiro
AU - Yang, Hui
N1 - Funding Information:
The authors would like to thank Ryo Harasawa, Kazuki Honda and Yuya Yasue of Waseda University for their help in the TRPL measurements. This work is supported in part by the National Natural Science Foundation of China (Grant Nos. 61176128 and 61376081 ) and the SINANO-SONY joint program (Grant Nos. Y1AAQ11002 and Y2AAQ11004 ).
PY - 2014/8
Y1 - 2014/8
N2 - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
AB - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.
KW - Carrier recombination dynamics
KW - InGaAsP
KW - Molecular beam epitaxy
KW - Solar cell
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U2 - 10.1016/j.solmat.2014.03.051
DO - 10.1016/j.solmat.2014.03.051
M3 - Article
AN - SCOPUS:84899698114
VL - 127
SP - 1
EP - 5
JO - Solar Cells
JF - Solar Cells
SN - 0927-0248
ER -
