Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji; Shulong Lu; Yuanyuan Wu; Pai Dai; Lifeng Bian; Masayuki Arimochi; Tomomasa Watanabe; Naohiro Asaka; Mitsunori Uemura; Atsushi Tackeuchi; Shiro Uchida; Hui Yang

doi:10.1016/j.solmat.2014.03.051

Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang

Research output: Contribution to journal › Article

22 Citations (Scopus)

Abstract

The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	127
DOIs	https://doi.org/10.1016/j.solmat.2014.03.051
Publication status	Published - 2014

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Keywords

Carrier recombination dynamics
InGaAsP
Molecular beam epitaxy
Solar cell

ASJC Scopus subject areas

Renewable Energy, Sustainability and the Environment
Electronic, Optical and Magnetic Materials
Surfaces, Coatings and Films

Cite this

Ji, L., Lu, S., Wu, Y., Dai, P., Bian, L., Arimochi, M., Watanabe, T., Asaka, N., Uemura, M., Tackeuchi, A., Uchida, S., & Yang, H. (2014). Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. Solar Energy Materials and Solar Cells, 127, 1-5. https://doi.org/10.1016/j.solmat.2014.03.051

Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. / Ji, Lian; Lu, Shulong; Wu, Yuanyuan; Dai, Pai; Bian, Lifeng; Arimochi, Masayuki; Watanabe, Tomomasa; Asaka, Naohiro; Uemura, Mitsunori; Tackeuchi, Atsushi; Uchida, Shiro; Yang, Hui.

In: Solar Energy Materials and Solar Cells, Vol. 127, 2014, p. 1-5.

Research output: Contribution to journal › Article

Ji, Lian ; Lu, Shulong ; Wu, Yuanyuan ; Dai, Pai ; Bian, Lifeng ; Arimochi, Masayuki ; Watanabe, Tomomasa ; Asaka, Naohiro ; Uemura, Mitsunori ; Tackeuchi, Atsushi ; Uchida, Shiro ; Yang, Hui. / Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. In: Solar Energy Materials and Solar Cells. 2014 ; Vol. 127. pp. 1-5.

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abstract = "The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.",

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AU - Arimochi, Masayuki

AU - Watanabe, Tomomasa

AU - Asaka, Naohiro

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AU - Tackeuchi, Atsushi

AU - Uchida, Shiro

AU - Yang, Hui

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AB - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

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10.1016/j.solmat.2014.03.051