Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji; Shulong Lu; Yuanyuan Wu; Pai Dai; Lifeng Bian; Masayuki Arimochi; Tomomasa Watanabe; Naohiro Asaka; Mitsunori Uemura; Atsushi Tackeuchi; Shiro Uchida; Hui Yang

doi:10.1016/j.solmat.2014.03.051

Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang

School of Advanced Science and Engineering

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

Original language	English
Pages (from-to)	1-5
Number of pages	5
Journal	Solar Energy Materials and Solar Cells
Volume	127
DOIs	https://doi.org/10.1016/j.solmat.2014.03.051
Publication status	Published - 2014 Aug

Keywords

Carrier recombination dynamics
InGaAsP
Molecular beam epitaxy
Solar cell

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films

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Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. / Ji, Lian; Lu, Shulong; Wu, Yuanyuan; Dai, Pai; Bian, Lifeng; Arimochi, Masayuki; Watanabe, Tomomasa; Asaka, Naohiro; Uemura, Mitsunori; Tackeuchi, Atsushi; Uchida, Shiro; Yang, Hui.

In: Solar Energy Materials and Solar Cells, Vol. 127, 08.2014, p. 1-5.

Research output: Contribution to journal › Article › peer-review

Ji, Lian ; Lu, Shulong ; Wu, Yuanyuan ; Dai, Pai ; Bian, Lifeng ; Arimochi, Masayuki ; Watanabe, Tomomasa ; Asaka, Naohiro ; Uemura, Mitsunori ; Tackeuchi, Atsushi ; Uchida, Shiro ; Yang, Hui. / Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. In: Solar Energy Materials and Solar Cells. 2014 ; Vol. 127. pp. 1-5.

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abstract = "The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.",

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author = "Lian Ji and Shulong Lu and Yuanyuan Wu and Pai Dai and Lifeng Bian and Masayuki Arimochi and Tomomasa Watanabe and Naohiro Asaka and Mitsunori Uemura and Atsushi Tackeuchi and Shiro Uchida and Hui Yang",

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AU - Bian, Lifeng

AU - Arimochi, Masayuki

AU - Watanabe, Tomomasa

AU - Asaka, Naohiro

AU - Uemura, Mitsunori

AU - Tackeuchi, Atsushi

AU - Uchida, Shiro

AU - Yang, Hui

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N2 - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

AB - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

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