Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji, Shulong Lu, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang

    Research output: Contribution to journalArticle

    20 Citations (Scopus)

    Abstract

    The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

    Original languageEnglish
    Pages (from-to)1-5
    Number of pages5
    JournalSolar Energy Materials and Solar Cells
    Volume127
    DOIs
    Publication statusPublished - 2014

    Fingerprint

    Molecular beam epitaxy
    Solar cells
    Photoluminescence
    Energy gap
    Doping (additives)
    Temperature

    Keywords

    • Carrier recombination dynamics
    • InGaAsP
    • Molecular beam epitaxy
    • Solar cell

    ASJC Scopus subject areas

    • Renewable Energy, Sustainability and the Environment
    • Electronic, Optical and Magnetic Materials
    • Surfaces, Coatings and Films

    Cite this

    Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. / Ji, Lian; Lu, Shulong; Wu, Yuanyuan; Dai, Pai; Bian, Lifeng; Arimochi, Masayuki; Watanabe, Tomomasa; Asaka, Naohiro; Uemura, Mitsunori; Tackeuchi, Atsushi; Uchida, Shiro; Yang, Hui.

    In: Solar Energy Materials and Solar Cells, Vol. 127, 2014, p. 1-5.

    Research output: Contribution to journalArticle

    Ji, Lian ; Lu, Shulong ; Wu, Yuanyuan ; Dai, Pai ; Bian, Lifeng ; Arimochi, Masayuki ; Watanabe, Tomomasa ; Asaka, Naohiro ; Uemura, Mitsunori ; Tackeuchi, Atsushi ; Uchida, Shiro ; Yang, Hui. / Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells. In: Solar Energy Materials and Solar Cells. 2014 ; Vol. 127. pp. 1-5.
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    abstract = "The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4{\%} was obtained under the AM1.5G solar spectra.",
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    AU - Lu, Shulong

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    AU - Dai, Pai

    AU - Bian, Lifeng

    AU - Arimochi, Masayuki

    AU - Watanabe, Tomomasa

    AU - Asaka, Naohiro

    AU - Uemura, Mitsunori

    AU - Tackeuchi, Atsushi

    AU - Uchida, Shiro

    AU - Yang, Hui

    PY - 2014

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    AB - The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

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    KW - Solar cell

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