Carrier recombination dynamics of MBE grown InGaAsP layers with 1 eV bandgap for quadruple-junction solar cells

Lian Ji, Shulong Lu*, Yuanyuan Wu, Pai Dai, Lifeng Bian, Masayuki Arimochi, Tomomasa Watanabe, Naohiro Asaka, Mitsunori Uemura, Atsushi Tackeuchi, Shiro Uchida, Hui Yang

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


The carrier recombination dynamics of InGaAsP material with a bandgap energy of 1 eV for quadruple-junction solar cells grown by solid-source molecular beam epitaxy have been investigated by the employment of time-resolved photoluminescence (PL) measurement. For the nominally undoped material, the PL decay time increases with increasing temperature, which indicates that radiative recombination dominates the recombination process. The radiative and the nonradiative recombination time constants were calculated on the basis of the temperature-dependent PL decay time and the integrated PL intensity. With the incorporation of Be (as the p-type dopant) into the material, the PL decay time decreases with increasing temperature, and a double-exponential PL decay curve is observed in the case of the material with a higher doping density. An InGaAsP-based single-junction photovoltaic device with a bandgap of 1 eV was fabricated, and an efficiency of 16.4% was obtained under the AM1.5G solar spectra.

Original languageEnglish
Pages (from-to)1-5
Number of pages5
JournalSolar Energy Materials and Solar Cells
Publication statusPublished - 2014 Aug


  • Carrier recombination dynamics
  • InGaAsP
  • Molecular beam epitaxy
  • Solar cell

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films


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