@inproceedings{10d448949fce4370b58e794decb887cf,
title = "Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well",
abstract = "We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.",
keywords = "Excitons, GaInNAsSb/GaNAsSb/GaAs, Quantum well, Spin relaxation time",
author = "T. Asami and H. Nosho and Li, {L. H.} and Harmand, {J. C.} and Lu, {S. L.} and A. Tackeuchi",
year = "2011",
doi = "10.1063/1.3666552",
language = "English",
isbn = "9780735410022",
series = "AIP Conference Proceedings",
pages = "665--666",
booktitle = "Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30",
note = "30th International Conference on the Physics of Semiconductors, ICPS-30 ; Conference date: 25-07-2010 Through 30-07-2010",
}