Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

T. Asami, H. Nosho, L. H. Li, J. C. Harmand, S. L. Lu, Atsushi Tackeuchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages665-666
    Number of pages2
    Volume1399
    DOIs
    Publication statusPublished - 2011
    Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul
    Duration: 2010 Jul 252010 Jul 30

    Other

    Other30th International Conference on the Physics of Semiconductors, ICPS-30
    CitySeoul
    Period10/7/2510/7/30

    Fingerprint

    quantum wells
    relaxation time
    life (durability)
    carrier lifetime
    molecular beam epitaxy
    photoluminescence
    crystals

    Keywords

    • Excitons
    • GaInNAsSb/GaNAsSb/GaAs
    • Quantum well
    • Spin relaxation time

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Asami, T., Nosho, H., Li, L. H., Harmand, J. C., Lu, S. L., & Tackeuchi, A. (2011). Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well. In AIP Conference Proceedings (Vol. 1399, pp. 665-666) https://doi.org/10.1063/1.3666552

    Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well. / Asami, T.; Nosho, H.; Li, L. H.; Harmand, J. C.; Lu, S. L.; Tackeuchi, Atsushi.

    AIP Conference Proceedings. Vol. 1399 2011. p. 665-666.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Asami, T, Nosho, H, Li, LH, Harmand, JC, Lu, SL & Tackeuchi, A 2011, Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well. in AIP Conference Proceedings. vol. 1399, pp. 665-666, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, 10/7/25. https://doi.org/10.1063/1.3666552
    Asami T, Nosho H, Li LH, Harmand JC, Lu SL, Tackeuchi A. Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well. In AIP Conference Proceedings. Vol. 1399. 2011. p. 665-666 https://doi.org/10.1063/1.3666552
    Asami, T. ; Nosho, H. ; Li, L. H. ; Harmand, J. C. ; Lu, S. L. ; Tackeuchi, Atsushi. / Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well. AIP Conference Proceedings. Vol. 1399 2011. pp. 665-666
    @inproceedings{10d448949fce4370b58e794decb887cf,
    title = "Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well",
    abstract = "We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.",
    keywords = "Excitons, GaInNAsSb/GaNAsSb/GaAs, Quantum well, Spin relaxation time",
    author = "T. Asami and H. Nosho and Li, {L. H.} and Harmand, {J. C.} and Lu, {S. L.} and Atsushi Tackeuchi",
    year = "2011",
    doi = "10.1063/1.3666552",
    language = "English",
    isbn = "9780735410022",
    volume = "1399",
    pages = "665--666",
    booktitle = "AIP Conference Proceedings",

    }

    TY - GEN

    T1 - Carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well

    AU - Asami, T.

    AU - Nosho, H.

    AU - Li, L. H.

    AU - Harmand, J. C.

    AU - Lu, S. L.

    AU - Tackeuchi, Atsushi

    PY - 2011

    Y1 - 2011

    N2 - We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

    AB - We have investigated the carrier spin relaxation in GaInNAsSb/GaNAsSb/GaAs quantum well (QW) by time-resolved photoluminescence (PL) measurement. The sample consists of an 8-nm-thick GaIn 0.36N 0.006AsSb 0.015 well, 5-nm-thick GaN 0.01AsSb 0.11 intermediate barriers and 100-nm-thick GaAs barriers grown by molecular beam epitaxy on a GaAs(100) substrate. The spin relaxation time and recombination lifetime at 10 K are measured to be 228 ps and 151 ps, respectively. As a reference, we have also obtained a spin relaxation time of 125 ps and a recombination lifetime of 63 ps for GaInNAs/GaNAs/GaAs QW. This result shows that crystal quality is slightly improved by adding Sb, although these short carrier lifetimes mainly originate from a nonradiative recombination. These spin relaxation times are longer than the 36 ps spin relaxation time of InGaAs/InP QWs and shorter than the 2 ns spin relaxation time of GaInNAs/GaAs QW.

    KW - Excitons

    KW - GaInNAsSb/GaNAsSb/GaAs

    KW - Quantum well

    KW - Spin relaxation time

    UR - http://www.scopus.com/inward/record.url?scp=84862781860&partnerID=8YFLogxK

    UR - http://www.scopus.com/inward/citedby.url?scp=84862781860&partnerID=8YFLogxK

    U2 - 10.1063/1.3666552

    DO - 10.1063/1.3666552

    M3 - Conference contribution

    AN - SCOPUS:84862781860

    SN - 9780735410022

    VL - 1399

    SP - 665

    EP - 666

    BT - AIP Conference Proceedings

    ER -