Carrier spin relaxation in InGaAs/AlAsSb quantum wells

T. Nukui, S. Gozu, T. Mozume, S. Izumi, Y. Saeki, Atsushi Tackeuchi

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.38 μm-electron-heavy-hole excitons at 150 K is obtained to be 34-43 ps at an excitation power of 50-80 mW. The observed carrier density dependence and temperature independence of the spin relaxation time indicate that the spin relaxation mechanism is dominated by the Bir-Aronov-Pikus process.

    Original languageEnglish
    Title of host publicationAIP Conference Proceedings
    Pages659-660
    Number of pages2
    Volume1399
    DOIs
    Publication statusPublished - 2011
    Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul
    Duration: 2010 Jul 252010 Jul 30

    Other

    Other30th International Conference on the Physics of Semiconductors, ICPS-30
    CitySeoul
    Period10/7/2510/7/30

    Fingerprint

    quantum wells
    relaxation time
    excitons
    pumps
    reflectance
    probes
    excitation
    electrons
    temperature

    Keywords

    • Dynamics
    • Electronics
    • Excitons
    • GaAs

    ASJC Scopus subject areas

    • Physics and Astronomy(all)

    Cite this

    Nukui, T., Gozu, S., Mozume, T., Izumi, S., Saeki, Y., & Tackeuchi, A. (2011). Carrier spin relaxation in InGaAs/AlAsSb quantum wells. In AIP Conference Proceedings (Vol. 1399, pp. 659-660) https://doi.org/10.1063/1.3666549

    Carrier spin relaxation in InGaAs/AlAsSb quantum wells. / Nukui, T.; Gozu, S.; Mozume, T.; Izumi, S.; Saeki, Y.; Tackeuchi, Atsushi.

    AIP Conference Proceedings. Vol. 1399 2011. p. 659-660.

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Nukui, T, Gozu, S, Mozume, T, Izumi, S, Saeki, Y & Tackeuchi, A 2011, Carrier spin relaxation in InGaAs/AlAsSb quantum wells. in AIP Conference Proceedings. vol. 1399, pp. 659-660, 30th International Conference on the Physics of Semiconductors, ICPS-30, Seoul, 10/7/25. https://doi.org/10.1063/1.3666549
    Nukui T, Gozu S, Mozume T, Izumi S, Saeki Y, Tackeuchi A. Carrier spin relaxation in InGaAs/AlAsSb quantum wells. In AIP Conference Proceedings. Vol. 1399. 2011. p. 659-660 https://doi.org/10.1063/1.3666549
    Nukui, T. ; Gozu, S. ; Mozume, T. ; Izumi, S. ; Saeki, Y. ; Tackeuchi, Atsushi. / Carrier spin relaxation in InGaAs/AlAsSb quantum wells. AIP Conference Proceedings. Vol. 1399 2011. pp. 659-660
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    AU - Gozu, S.

    AU - Mozume, T.

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    AU - Saeki, Y.

    AU - Tackeuchi, Atsushi

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