Carrier spin relaxation in InGaAs/AlAsSb quantum wells

T. Nukui, S. Gozu, T. Mozume, S. Izumi, Y. Saeki, A. Tackeuchi

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We have investigated the exciton spin relaxation in InGaAs/AlAsSb quantum wells by time-resolved spin-dependent pump and probe reflectance measurements. The spin relaxation time of 1.38 μm-electron-heavy-hole excitons at 150 K is obtained to be 34-43 ps at an excitation power of 50-80 mW. The observed carrier density dependence and temperature independence of the spin relaxation time indicate that the spin relaxation mechanism is dominated by the Bir-Aronov-Pikus process.

Original languageEnglish
Title of host publicationPhysics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30
Pages659-660
Number of pages2
DOIs
Publication statusPublished - 2011 Dec 1
Event30th International Conference on the Physics of Semiconductors, ICPS-30 - Seoul, Korea, Republic of
Duration: 2010 Jul 252010 Jul 30

Publication series

NameAIP Conference Proceedings
Volume1399
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference30th International Conference on the Physics of Semiconductors, ICPS-30
CountryKorea, Republic of
CitySeoul
Period10/7/2510/7/30

Keywords

  • Dynamics
  • Electronics
  • Excitons
  • GaAs

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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  • Cite this

    Nukui, T., Gozu, S., Mozume, T., Izumi, S., Saeki, Y., & Tackeuchi, A. (2011). Carrier spin relaxation in InGaAs/AlAsSb quantum wells. In Physics of Semiconductors - 30th International Conference on the Physics of Semiconductors, ICPS-30 (pp. 659-660). (AIP Conference Proceedings; Vol. 1399). https://doi.org/10.1063/1.3666549