Carrier spin relaxation in undoped GaAs double quantum wells

S. L. Lu, T. Ushiyama, Atsushi Tackeuchi, S. Muto

    Research output: Contribution to journalArticle

    1 Citation (Scopus)

    Abstract

    Carrier spin relaxation in undoped GaAs/AlGaAs asymmetric double quantum wells (QWs) at room temperature was studied by spin-dependent pump and probe reflection measurements. The electron tunneling, which occurs between the two lowest conduction bands in the narrow and wide QWs, has a negligible effect on the electron spin relaxation. The most striking feature is that a long hole spin relaxation time was directly observed in the case of fast electron tunneling while it was not observed in the case of relatively slow electron tunneling. The hole that remains in the QWs due to the escape of the electron tunneling out makes the direct observation of hole spin relaxation possible. The measured hole spin relaxation time varies from 107 ps to 80 ps when the excitation power changes from 10 mW to 40 mW. This study provides direct experimental evidence of the important effect of the interaction between electrons and holes on the hole spin relaxation.

    Original languageEnglish
    Pages (from-to)326-329
    Number of pages4
    JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
    Volume5
    Issue number1
    DOIs
    Publication statusPublished - 2008

    Fingerprint

    quantum wells
    electron tunneling
    relaxation time
    electron spin
    escape
    aluminum gallium arsenides
    conduction bands
    pumps
    probes
    room temperature
    excitation
    electrons
    interactions

    ASJC Scopus subject areas

    • Condensed Matter Physics

    Cite this

    Carrier spin relaxation in undoped GaAs double quantum wells. / Lu, S. L.; Ushiyama, T.; Tackeuchi, Atsushi; Muto, S.

    In: Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 5, No. 1, 2008, p. 326-329.

    Research output: Contribution to journalArticle

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