Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition

Hiroshi Kawarada, Y. Yokota, Y. Mori, K. Nishimura, A. Hiraki

Research output: Contribution to journalArticle

91 Citations (Scopus)

Abstract

Visible luminescence between 2.0-3.5 eV of undoped and boron-doped diamond formed by plasma-assisted chemical vapor deposition has been investigated by cathodoluminescence. Electroluminescence from Schottky diode of boron-doped semiconducting diamond has been observed for the first time and found to be due to the same luminescent center as that of cathodoluminescence. In the particles or films where the content of nitrogen and boron was greatly reduced, the cathodoluminescence peaks occurred at 2.8-2.9 eV. The characteristics of these emission spectra are very similar to those obtained in type-IIa diamond where dislocations are luminescent. The doping of boron during the deposition form another luminescent center at 2.3-2.4 eV. From the monochromatic cathodoluminescence imaging, the luminescent regions differ in the two peaks. {100} sectors are much more luminescent than {111} sectors at the signal of 2.8 eV. This phenomenon has been discussed based on the difference in defect or impurity concentration of each sector.

Original languageEnglish
Pages (from-to)983-989
Number of pages7
JournalJournal of Applied Physics
Volume67
Issue number2
DOIs
Publication statusPublished - 1990
Externally publishedYes

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cathodoluminescence
electroluminescence
boron
diamonds
vapor deposition
sectors
Schottky diodes
emission spectra
luminescence
nitrogen
impurities
defects

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Cathodoluminescence and electroluminescence of undoped and boron-doped diamond formed by plasma chemical vapor deposition. / Kawarada, Hiroshi; Yokota, Y.; Mori, Y.; Nishimura, K.; Hiraki, A.

In: Journal of Applied Physics, Vol. 67, No. 2, 1990, p. 983-989.

Research output: Contribution to journalArticle

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AU - Nishimura, K.

AU - Hiraki, A.

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N2 - Visible luminescence between 2.0-3.5 eV of undoped and boron-doped diamond formed by plasma-assisted chemical vapor deposition has been investigated by cathodoluminescence. Electroluminescence from Schottky diode of boron-doped semiconducting diamond has been observed for the first time and found to be due to the same luminescent center as that of cathodoluminescence. In the particles or films where the content of nitrogen and boron was greatly reduced, the cathodoluminescence peaks occurred at 2.8-2.9 eV. The characteristics of these emission spectra are very similar to those obtained in type-IIa diamond where dislocations are luminescent. The doping of boron during the deposition form another luminescent center at 2.3-2.4 eV. From the monochromatic cathodoluminescence imaging, the luminescent regions differ in the two peaks. {100} sectors are much more luminescent than {111} sectors at the signal of 2.8 eV. This phenomenon has been discussed based on the difference in defect or impurity concentration of each sector.

AB - Visible luminescence between 2.0-3.5 eV of undoped and boron-doped diamond formed by plasma-assisted chemical vapor deposition has been investigated by cathodoluminescence. Electroluminescence from Schottky diode of boron-doped semiconducting diamond has been observed for the first time and found to be due to the same luminescent center as that of cathodoluminescence. In the particles or films where the content of nitrogen and boron was greatly reduced, the cathodoluminescence peaks occurred at 2.8-2.9 eV. The characteristics of these emission spectra are very similar to those obtained in type-IIa diamond where dislocations are luminescent. The doping of boron during the deposition form another luminescent center at 2.3-2.4 eV. From the monochromatic cathodoluminescence imaging, the luminescent regions differ in the two peaks. {100} sectors are much more luminescent than {111} sectors at the signal of 2.8 eV. This phenomenon has been discussed based on the difference in defect or impurity concentration of each sector.

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