Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD

Yoshihiro Yokota, Hiroshi Kawarada, Jing Sheng Ma, Kazuhito Nishimura, Akio Hiraki

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.

Original languageEnglish
Pages (from-to)65-70
Number of pages6
JournalJournal of Crystal Growth
Volume103
Issue number1-4
DOIs
Publication statusPublished - 1990 Jun 2
Externally publishedYes

Fingerprint

Semiconducting diamonds
Diamond
Cathodoluminescence
cathodoluminescence
Chemical vapor deposition
Diamonds
diamonds
vapor deposition
Plasmas
Imaging techniques
sectors
Boron
Crystal defects
Dislocations (crystals)
Single crystals
polyhedrons
crystal defects
boron

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD. / Yokota, Yoshihiro; Kawarada, Hiroshi; Ma, Jing Sheng; Nishimura, Kazuhito; Hiraki, Akio.

In: Journal of Crystal Growth, Vol. 103, No. 1-4, 02.06.1990, p. 65-70.

Research output: Contribution to journalArticle

Yokota, Yoshihiro ; Kawarada, Hiroshi ; Ma, Jing Sheng ; Nishimura, Kazuhito ; Hiraki, Akio. / Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD. In: Journal of Crystal Growth. 1990 ; Vol. 103, No. 1-4. pp. 65-70.
@article{030cd37ccd934eec834b407081750adc,
title = "Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD",
abstract = "Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.",
author = "Yoshihiro Yokota and Hiroshi Kawarada and Ma, {Jing Sheng} and Kazuhito Nishimura and Akio Hiraki",
year = "1990",
month = "6",
day = "2",
doi = "10.1016/0022-0248(90)90171-G",
language = "English",
volume = "103",
pages = "65--70",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1-4",

}

TY - JOUR

T1 - Cathodoluminescence imaging of semiconducting diamond formed by plasma CVD

AU - Yokota, Yoshihiro

AU - Kawarada, Hiroshi

AU - Ma, Jing Sheng

AU - Nishimura, Kazuhito

AU - Hiraki, Akio

PY - 1990/6/2

Y1 - 1990/6/2

N2 - Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.

AB - Boron-doped p-type semiconducting diamond formed by plasma-assisted chemical vapor deposition (CVD) shows the same blue cathodoluminescence (CL), having a peak at 2.8-2.9 eV, as that of natiural semiconducting diamond classified as type IIb. In natural type IIb diamond (semiconducting) and in natural type IIa diamond (insulating), dislocations are luminescent regions. In single crystal polyhedrons of CVD diamond it has been observed that the luminescent regions are located at {100} growth sectors, but few are found at {111} sectors. This feature can be explained by the difference in the introduction of crystal defects between the {100} and {111} sectors. This phenomenon in CVD diamond has been discussed in comparison with natural type IIb diamond.

UR - http://www.scopus.com/inward/record.url?scp=0025436919&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0025436919&partnerID=8YFLogxK

U2 - 10.1016/0022-0248(90)90171-G

DO - 10.1016/0022-0248(90)90171-G

M3 - Article

AN - SCOPUS:0025436919

VL - 103

SP - 65

EP - 70

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1-4

ER -