Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

K. Tanabe; K. Nakazawa; J. Susantyo; H. Kawarada; S. Koizumi

doi:10.1016/S0925-9635(01)00389-2

Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

K. Tanabe^*, K. Nakazawa, J. Susantyo, H. Kawarada, S. Koizumi

^*Corresponding author for this work

School of Fundamental Science and Engineering

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

A homoepitaxial diamond film with a thickness of approximately 1 μm was grown on the (111) surface of a type Ib diamond substrate with dopant concentration (PH₃/CH₄) of 500 ppm. Bound exciton recombination radiation due to the neutral donors has been observed in the peaks at 5.18 and 5.32 eV. The dominant peak at 5.18 eV is associated with one TO phonon. The peak at 5.32 eV is the radiation without phonon emission due to the localization of donors. This appearance of non-phonon emission is one of the important evidences to prove the two peaks at 5.18 and 5.32 eV to be the recombination radiation of bound exciton due to the donor. The binding energy of the free exciton to the donors, which is deduced from the energy difference between free and bound exciton, is 90 meV.

Original language	English
Pages (from-to)	1652-1654
Number of pages	3
Journal	Diamond and Related Materials
Volume	10
Issue number	9-10
DOIs	https://doi.org/10.1016/S0925-9635(01)00389-2
Publication status	Published - 2001 Sept 1

Keywords

Cathodoluminescence
Diamond
Phosphorus

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Chemistry(all)
Mechanical Engineering
Materials Chemistry
Electrical and Electronic Engineering

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10.1016/S0925-9635(01)00389-2

Cite this

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title = "Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films",

abstract = "A homoepitaxial diamond film with a thickness of approximately 1 μm was grown on the (111) surface of a type Ib diamond substrate with dopant concentration (PH3/CH4) of 500 ppm. Bound exciton recombination radiation due to the neutral donors has been observed in the peaks at 5.18 and 5.32 eV. The dominant peak at 5.18 eV is associated with one TO phonon. The peak at 5.32 eV is the radiation without phonon emission due to the localization of donors. This appearance of non-phonon emission is one of the important evidences to prove the two peaks at 5.18 and 5.32 eV to be the recombination radiation of bound exciton due to the donor. The binding energy of the free exciton to the donors, which is deduced from the energy difference between free and bound exciton, is 90 meV.",

keywords = "Cathodoluminescence, Diamond, Phosphorus",

author = "K. Tanabe and K. Nakazawa and J. Susantyo and H. Kawarada and S. Koizumi",

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TY - JOUR

T1 - Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

AU - Tanabe, K.

AU - Nakazawa, K.

AU - Susantyo, J.

AU - Kawarada, H.

AU - Koizumi, S.

PY - 2001/9/1

Y1 - 2001/9/1

N2 - A homoepitaxial diamond film with a thickness of approximately 1 μm was grown on the (111) surface of a type Ib diamond substrate with dopant concentration (PH3/CH4) of 500 ppm. Bound exciton recombination radiation due to the neutral donors has been observed in the peaks at 5.18 and 5.32 eV. The dominant peak at 5.18 eV is associated with one TO phonon. The peak at 5.32 eV is the radiation without phonon emission due to the localization of donors. This appearance of non-phonon emission is one of the important evidences to prove the two peaks at 5.18 and 5.32 eV to be the recombination radiation of bound exciton due to the donor. The binding energy of the free exciton to the donors, which is deduced from the energy difference between free and bound exciton, is 90 meV.

AB - A homoepitaxial diamond film with a thickness of approximately 1 μm was grown on the (111) surface of a type Ib diamond substrate with dopant concentration (PH3/CH4) of 500 ppm. Bound exciton recombination radiation due to the neutral donors has been observed in the peaks at 5.18 and 5.32 eV. The dominant peak at 5.18 eV is associated with one TO phonon. The peak at 5.32 eV is the radiation without phonon emission due to the localization of donors. This appearance of non-phonon emission is one of the important evidences to prove the two peaks at 5.18 and 5.32 eV to be the recombination radiation of bound exciton due to the donor. The binding energy of the free exciton to the donors, which is deduced from the energy difference between free and bound exciton, is 90 meV.

KW - Cathodoluminescence

KW - Diamond

KW - Phosphorus

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DO - 10.1016/S0925-9635(01)00389-2

M3 - Article

AN - SCOPUS:0035449860

SN - 0925-9635

VL - 10

SP - 1652

EP - 1654

JO - Diamond and Related Materials

JF - Diamond and Related Materials

IS - 9-10

ER -

Cathodoluminescence of phosphorus doped (111) homoepitaxial diamond thin films

Abstract

Keywords

ASJC Scopus subject areas

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