Cathodoluminescence of vapour-synthesized diamond

H. Kawarada; Y. Yokota; Y. Mori; K. Nishimura; T. Ito; J. Suzuki; K. S. Mar; J. Wei; A. Hiraki

doi:10.1117/12.951584

Cathodoluminescence of vapour-synthesized diamond

H. Kawarada, Y. Yokota, Y. Mori, K. Nishimura, T. Ito, J. Suzuki, K. S. Mar, J. Wei, A. Hiraki

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

Cathodoluminescence of diamond films has been investigated in the range of 2.0-3.5 eV. The CL spectra of diamond films are very sensitive to impurities such as nitrogen and boron. The main emission peak occurs around 2.8 eV in the films where the content of these impurities are lowered. The shape and behaviour of the spectra of the films are very similar to those obtained in natural type IIa diamond. The boron doping to the films increases the CL intensity. The luminescence is explained by donor-acceptor pair recombination where the acceptor is substitutional boron. In the semiconducting film, electroluminescence has been observed at metal/diamond(p-type) interfaces for the first time. From the CL imaging study, (100) growth sectors of diamond particle are much more luminescent than (111) sectors. This result indicates that the introduction of impurity or defect during crystal growth differs in each sectors.

Original language	English
Pages (from-to)	162-169
Number of pages	8
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	1055
DOIs	https://doi.org/10.1117/12.951584
Publication status	Published - 1989 Jul 5
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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Cite this

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title = "Cathodoluminescence of vapour-synthesized diamond",

abstract = "Cathodoluminescence of diamond films has been investigated in the range of 2.0-3.5 eV. The CL spectra of diamond films are very sensitive to impurities such as nitrogen and boron. The main emission peak occurs around 2.8 eV in the films where the content of these impurities are lowered. The shape and behaviour of the spectra of the films are very similar to those obtained in natural type IIa diamond. The boron doping to the films increases the CL intensity. The luminescence is explained by donor-acceptor pair recombination where the acceptor is substitutional boron. In the semiconducting film, electroluminescence has been observed at metal/diamond(p-type) interfaces for the first time. From the CL imaging study, (100) growth sectors of diamond particle are much more luminescent than (111) sectors. This result indicates that the introduction of impurity or defect during crystal growth differs in each sectors.",

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T1 - Cathodoluminescence of vapour-synthesized diamond

AU - Kawarada, H.

AU - Yokota, Y.

AU - Mori, Y.

AU - Nishimura, K.

AU - Ito, T.

AU - Suzuki, J.

AU - Mar, K. S.

AU - Wei, J.

AU - Hiraki, A.

PY - 1989/7/5

Y1 - 1989/7/5

N2 - Cathodoluminescence of diamond films has been investigated in the range of 2.0-3.5 eV. The CL spectra of diamond films are very sensitive to impurities such as nitrogen and boron. The main emission peak occurs around 2.8 eV in the films where the content of these impurities are lowered. The shape and behaviour of the spectra of the films are very similar to those obtained in natural type IIa diamond. The boron doping to the films increases the CL intensity. The luminescence is explained by donor-acceptor pair recombination where the acceptor is substitutional boron. In the semiconducting film, electroluminescence has been observed at metal/diamond(p-type) interfaces for the first time. From the CL imaging study, (100) growth sectors of diamond particle are much more luminescent than (111) sectors. This result indicates that the introduction of impurity or defect during crystal growth differs in each sectors.

AB - Cathodoluminescence of diamond films has been investigated in the range of 2.0-3.5 eV. The CL spectra of diamond films are very sensitive to impurities such as nitrogen and boron. The main emission peak occurs around 2.8 eV in the films where the content of these impurities are lowered. The shape and behaviour of the spectra of the films are very similar to those obtained in natural type IIa diamond. The boron doping to the films increases the CL intensity. The luminescence is explained by donor-acceptor pair recombination where the acceptor is substitutional boron. In the semiconducting film, electroluminescence has been observed at metal/diamond(p-type) interfaces for the first time. From the CL imaging study, (100) growth sectors of diamond particle are much more luminescent than (111) sectors. This result indicates that the introduction of impurity or defect during crystal growth differs in each sectors.

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Cathodoluminescence of vapour-synthesized diamond

Abstract

ASJC Scopus subject areas

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