Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

G. I M Prinz, A. Ladenburger, M. Schirra, M. Feneberg, K. Thonke, R. Sauer, Y. Taniyasu, M. Kasu, Toshiki Makimoto

Research output: Contribution to journalArticle

38 Citations (Scopus)

Abstract

Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.

Original languageEnglish
Article number023511
JournalJournal of Applied Physics
Volume101
Issue number2
DOIs
Publication statusPublished - 2007
Externally publishedYes

Fingerprint

aluminum nitrides
cathodoluminescence
silicon carbides
excitons
reflectance
photoluminescence
gallium nitrides
vapor phase epitaxy
luminescence
spectroscopy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate. / Prinz, G. I M; Ladenburger, A.; Schirra, M.; Feneberg, M.; Thonke, K.; Sauer, R.; Taniyasu, Y.; Kasu, M.; Makimoto, Toshiki.

In: Journal of Applied Physics, Vol. 101, No. 2, 023511, 2007.

Research output: Contribution to journalArticle

Prinz, GIM, Ladenburger, A, Schirra, M, Feneberg, M, Thonke, K, Sauer, R, Taniyasu, Y, Kasu, M & Makimoto, T 2007, 'Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate', Journal of Applied Physics, vol. 101, no. 2, 023511. https://doi.org/10.1063/1.2423141
Prinz, G. I M ; Ladenburger, A. ; Schirra, M. ; Feneberg, M. ; Thonke, K. ; Sauer, R. ; Taniyasu, Y. ; Kasu, M. ; Makimoto, Toshiki. / Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate. In: Journal of Applied Physics. 2007 ; Vol. 101, No. 2.
@article{4b52e110eb204b3e946afc7b08a02420,
title = "Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate",
abstract = "Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.",
author = "Prinz, {G. I M} and A. Ladenburger and M. Schirra and M. Feneberg and K. Thonke and R. Sauer and Y. Taniyasu and M. Kasu and Toshiki Makimoto",
year = "2007",
doi = "10.1063/1.2423141",
language = "English",
volume = "101",
journal = "Journal of Applied Physics",
issn = "0021-8979",
publisher = "American Institute of Physics Publising LLC",
number = "2",

}

TY - JOUR

T1 - Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate

AU - Prinz, G. I M

AU - Ladenburger, A.

AU - Schirra, M.

AU - Feneberg, M.

AU - Thonke, K.

AU - Sauer, R.

AU - Taniyasu, Y.

AU - Kasu, M.

AU - Makimoto, Toshiki

PY - 2007

Y1 - 2007

N2 - Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.

AB - Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.

UR - http://www.scopus.com/inward/record.url?scp=33847741431&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33847741431&partnerID=8YFLogxK

U2 - 10.1063/1.2423141

DO - 10.1063/1.2423141

M3 - Article

AN - SCOPUS:33847741431

VL - 101

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 2

M1 - 023511

ER -