Abstract
Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.
| Original language | English |
|---|---|
| Article number | 023511 |
| Journal | Journal of Applied Physics |
| Volume | 101 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2007 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)
Cite this
Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate. / Prinz, G. I M; Ladenburger, A.; Schirra, M.; Feneberg, M.; Thonke, K.; Sauer, R.; Taniyasu, Y.; Kasu, M.; Makimoto, Toshiki.
In: Journal of Applied Physics, Vol. 101, No. 2, 023511, 2007.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Cathodoluminescence, photoluminescence, and reflectance of an aluminum nitride layer grown on silicon carbide substrate
AU - Prinz, G. I M
AU - Ladenburger, A.
AU - Schirra, M.
AU - Feneberg, M.
AU - Thonke, K.
AU - Sauer, R.
AU - Taniyasu, Y.
AU - Kasu, M.
AU - Makimoto, Toshiki
PY - 2007
Y1 - 2007
N2 - Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.
AB - Aluminum nitride (AlN) has an ultrawide direct band gap of approximately 6.1 eV at low temperature and is fully miscible with gallium nitride. This makes AlN a promising material for ultraviolet optoelectronic applications. Here, we apply cathodoluminescence, photoluminescence, and reflectance spectroscopies to the same AlN layer grown by metalorganic vapor phase epitaxy on silicon carbide. In cathodoluminescence and photoluminescence, we observe strong near band edge emission at ≈6 eV. The contribution appearing at an energetic position of 5.983 eV could be identified as A free exciton recombination, strongly redshifted due to strain effects. The spectra obtained by reflectance measurements show features at 5.985 eV and ≈6.2 eV which we assign to the A exciton-in accordance to our luminescence measurements-and a combination of the B and C free excitons, respectively.
UR - http://www.scopus.com/inward/record.url?scp=33847741431&partnerID=8YFLogxK
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U2 - 10.1063/1.2423141
DO - 10.1063/1.2423141
M3 - Article
AN - SCOPUS:33847741431
VL - 101
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 2
M1 - 023511
ER -